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Application of High-Frequency EPR Spectroscopy for the Identification and Separation of Nitrogen and Vanadium Sites in Silicon Carbide Crystals and Heterostructures

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Abstract

The advantage of the high-frequency spectroscopy of electron paramagnetic resonance (EPR) for the identification of nitrogen donors and a deep compensating vanadium impurity in various crystallographic positions of the silicon-carbide crystal is shown. Measurements are performed using a new generation EPR spectrometer operating in the continuous wave and pulsed modes at frequencies of 94 and 130 GHz in a wide range of magnetic fields (–7–7 T) and temperatures (1.5–300 K). A magneto-optical closed-cycle cryogenic system (Spectormag PT), highly stable generators (94 and 130 GHz), and a cavity-free system for supplying microwave power to the sample are used.

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ACKNOWLEDGMENTS

We are grateful to E. Mokhov and S. Nagalyuk for the samples put at our disposal.

Funding

This work was supported by the Russian Foundation for Basic Research under grant no. 19-52-12058 and Deutsche Forschungsgemeinschaft (DFG) via ICRC TRR160 (Project C7).

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    E. V. Edinach, A. D. Krivoruchko, A. S. Gurin, M. V. Muzafarova, I. V. Ilyin, R. A. Babunts, N. G. Romanov, A. G. Badalyan & P. G. Baranov

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  1. E. V. Edinach
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  2. A. D. Krivoruchko
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  3. A. S. Gurin
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  4. M. V. Muzafarova
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  5. I. V. Ilyin
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  6. R. A. Babunts
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  7. N. G. Romanov
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  8. A. G. Badalyan
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  9. P. G. Baranov
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Correspondence to I. V. Ilyin or P. G. Baranov.

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The authors declare that they have no conflict of interest.

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Translated by A. Kazantsev

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Edinach, E.V., Krivoruchko, A.D., Gurin, A.S. et al. Application of High-Frequency EPR Spectroscopy for the Identification and Separation of Nitrogen and Vanadium Sites in Silicon Carbide Crystals and Heterostructures. Semiconductors 54, 150–156 (2020). https://doi.org/10.1134/S1063782620010066

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  • DOI: https://doi.org/10.1134/S1063782620010066

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