Skip to main content
SpringerLink
Log in

Induced surface states of the ultrathin Ba/3C-SiC(111) interface

  • Surfaces, Interfaces, and Thin Films
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

The electronic properties of the Ba/3C-SiC(111) nanointerface are for the first time studied by photoelectron spectroscopy with the use of synchrotron radiation in the energy range 80–450 eV. The experiments are performed in situ in ultrahigh vacuum for ultrathin Ba coatings on 3C-SiC(111) samples grown by a new method of substituting substrate atoms. It is found that the adsorption of Ba brings about the appearance of induced surface states with the binding energies 1.9, 6.2, and 7.5 eV. Evolution of the surface states and the spectra of the Si 2p and C 1s core levels shows that the Ba/3C-SiC(111) interface is formed due to charge transfer from Ba adatoms to surface Si atoms and underlying C atoms.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. S. E. Saddow and A. Agrawal, Advances in Silicon Carbide Processing and Applications (Artech House, London, 2004).

    Google Scholar 

  2. P. Soukiassian and H. B. Enriquez, J. Phys.: Condens Matter 16, 1611 (2004).

    ADS  Google Scholar 

  3. T. Seyller, J. Phys.: Condens. Matter 16, 1755 (2004).

    ADS  Google Scholar 

  4. S. A. Kukushkin and A. V. Osipov, J. Appl. Phys. 113, 024909 (2013).

    Article  ADS  Google Scholar 

  5. S. A. Kukushkin and A. V. Osipov, J. Phys. D: Appl. Phys. 47, 313001 (2014).

    Article  ADS  Google Scholar 

  6. S. W. King, R. J. Nemanich, and R. F. Davis, Phys. Status Solidi B 252, 391 (2015).

    Article  ADS  Google Scholar 

  7. Y. Hoshino, T. Nishimura, T. Yoneda, K. Ogawa, H. Namba, and Y. Kido, Surf. Sci. 505, 234 (2002).

    Article  ADS  Google Scholar 

  8. S. Watcharinyanon, C. Virojanadara, and L. I. Johansson, Surf. Sci. 605, 1918 (2011).

    Article  ADS  Google Scholar 

  9. S. Watcharinyanon, L. I. Johansson, C. Xia, and C. Virojanadara, J. Appl. Phys. 111, 083711 (2012).

    Article  ADS  Google Scholar 

  10. V. van Elsbergen, T. U. Kampen, and W. Monch, J. Appl. Phys. 79, 316 (1996).

    Article  ADS  Google Scholar 

  11. C. Virojanadara and L. I. Johansson, Surf. Sci. 600, 436 (2006).

    Article  ADS  Google Scholar 

  12. L. I. Johansson and C. Virojanadara, Phys. Status Solidi B 248, 667 (2011).

    Article  ADS  Google Scholar 

  13. B. Wenzien, P. Kackell, F. Bechstedt, and G. Cappellini, Phys. Rev. B 52, 10897 (1995).

    Article  ADS  Google Scholar 

  14. V. M. Bermudez and J. P. Long, Appl. Phys. Lett. 66, 475 (1995).

    Article  ADS  Google Scholar 

  15. H. W. Yeom, Y.-C. Chao, I. Matsuda, S. Hara, S. Yoshida, and R. I. G. Uhrberg, Phys. Rev. B 58, 10540 (1998).

    Article  ADS  Google Scholar 

  16. G. V. Benemanskaya, G. E. Frank-Kamenetskaya, N. M. Shmidt, and M. S. Dunaevski, J. Exp. Theor. Phys. 103, 441 (2006).

    Article  ADS  Google Scholar 

  17. A. G. Fedorus, A. G. Naumovets, and Yu. S. Vedula, Phys. Status Solidi A 13, 445 (1972).

    Article  ADS  Google Scholar 

  18. C. P. Cheng, I. H. Hong, and T. W. Pi, Phys. Rev. B 58, 4066 (1998).

    Article  ADS  Google Scholar 

  19. T. Okuda, K. S. An, A. Harasawa, and T. Kinoshita, Phys. Rev. B 71, 085317 (2005).

    Article  ADS  Google Scholar 

  20. G. V. Benemanskaya, V. N. Zhmerik, M. N. Lapushkin, and S. N. Timoshnev, JETP Lett. 91, 670 (2010).

    Article  ADS  Google Scholar 

  21. P.-A. Glans, T. Balasubramanian, M. Syvajarvi, R. Yakimova, and L. I. Johansson, Surf. Sci. 470, 284 (2001).

    Article  ADS  Google Scholar 

  22. R. Verucchi, L. Aversa, M. V. Nardi, S. Taioli, S. Beccara, D. Alfáe, L. Nasi, F. Rossi, G. Salviati, and S. Iannotta, J. Am. Chem. Soc. 134, 17400 (2012).

    Article  Google Scholar 

  23. G. V. Benemanskaya, P. A. Dementev, S. A. Kukushkin, M. N. Lapushkin, A. V. Osipov, B. Senkovskiy, and S. N. Timoshnev, Mater. Phys. Mech. 22, 183 (2015).

    Google Scholar 

  24. C. H. Park, B.-H. Cheong, K.-H. Lee, and K. J. Chang, Phys. Rev. B 49, 4485 (1994).

    Article  ADS  Google Scholar 

  25. L. Wenchang, Y. Weidong, and Z. Kaiming, J. Phys.: Condens. Matter 3, 9079 (1991).

    ADS  Google Scholar 

  26. J. Wang, L. Zhang, Q. Zeng, G. L. Vignoles, L. Cheng, and A. Guette, Phys. Rev. B 79, 125304 (2009).

    Article  ADS  Google Scholar 

  27. L. I. Johansson, F. Owman, and P. Martensson, Phys. Rev. B 53, 19793 (1996).

    Google Scholar 

  28. J. Schardt, J. Bernhardt, U. Starke, and K. Heinz, Phys. Rev. B 62, 10335 (2000).

    Article  ADS  Google Scholar 

  29. M. V. Gomoyunova, G. S. Grebenyuk, I. I. Pronin, S. M. Solov’ev, D. E. Marchenko, and D. V. Vyalykh, Phys. Solid State 53, 606 (2011).

    Article  ADS  Google Scholar 

  30. M. V. Gomoyunova, G. S. Grebenyuk, K. M. Popov, and I. I. Pronin, Tech. Phys. Lett. 39, 360 (2013).

    Article  ADS  Google Scholar 

  31. R. Takahashi, H. Handa, K. Imaizumi, H. Fukidome, A. Yoshigoe, Yu. Teraoka, and M. Suemitsu, Jpn. J. Appl. Phys. 50, 070103 (2011).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Ioffe Physical–Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    G. V. Benemanskaya, P. A. Dementev & M. N. Lapushkin

  2. Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg, 199178, Russia

    G. V. Benemanskaya, P. A. Dementev, S. A. Kukushkin, M. N. Lapushkin & S. N. Timoshnev

  3. St. Petersburg National Research University of Information Technologies, Mechanics, and Optics, St. Petersburg, 197101, Russia

    S. A. Kukushkin

  4. Helmholtz-Zentrum Berlin fur Materialen und Energie, Electronenspeicherring BESSY II D, Berlin, 12489, Germany

    B. V. Senkovskiy

  5. Academic University, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    S. N. Timoshnev

Authors
  1. G. V. Benemanskaya
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. P. A. Dementev
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. S. A. Kukushkin
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. M. N. Lapushkin
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. B. V. Senkovskiy
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. S. N. Timoshnev
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to G. V. Benemanskaya.

Additional information

Original Russian Text © G.V. Benemanskaya, P.A. Dementev, S.A. Kukushkin, M.N. Lapushkin, B.V. Senkovskiy, S.N. Timoshnev, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 4, pp. 465–469.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Benemanskaya, G.V., Dementev, P.A., Kukushkin, S.A. et al. Induced surface states of the ultrathin Ba/3C-SiC(111) interface. Semiconductors 50, 457–461 (2016). https://doi.org/10.1134/S1063782616040072

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782616040072

Keywords

Search

Navigation