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Effect of transverse electric field and temperature on light absorption in GaAs/AlGaAs tunnel-coupled quantum wells

  • XIX Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 10–14, 2015
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Abstract

The photoluminescence and intersubband absorption spectra are studied in GaAs/AlGaAs tunnel- coupled quantum well structures. The peak positions in the photoluminescence and absorption spectra are consistent with the theoretically calculated energies of optical carrier transitions. The effect of a transverse electric field and temperature on intersubband light absorption is studied. It is caused by electron redistribution between the size-quantization levels and a variation in the energy spectrum of quantum wells. The variation in the refractive index in the energy region of observed intersubband transitions is estimated using Kramers–Kronig relations.

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Authors and Affiliations

  1. Peter the Great Saint-Petersburg Polytechnic University, ul. Politekhnicheskaya 29, St. Petersburg, 195251, Russia

    D. A. Firsov, L. E. Vorobjev, M. Ya. Vinnichenko & R. M. Balagula

  2. Ioffe Physical–Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, Russia

    M. M. Kulagina & A. P. Vasil’iev

Authors
  1. D. A. Firsov
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  2. L. E. Vorobjev
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  3. M. Ya. Vinnichenko
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  4. R. M. Balagula
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  5. M. M. Kulagina
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  6. A. P. Vasil’iev
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Corresponding author

Correspondence to M. Ya. Vinnichenko.

Additional information

Original Russian Text © D.A. Firsov, L.E. Vorobjev, M.Ya. Vinnichenko, R.M. Balagula, M.M. Kulagina, A.P. Vasil’iev, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 11, pp. 1473–1477.

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Firsov, D.A., Vorobjev, L.E., Vinnichenko, M.Y. et al. Effect of transverse electric field and temperature on light absorption in GaAs/AlGaAs tunnel-coupled quantum wells. Semiconductors 49, 1425–1429 (2015). https://doi.org/10.1134/S1063782615110081

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  • DOI: https://doi.org/10.1134/S1063782615110081

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