Abstract
The ZnMnO thin films were deposited on glass substrates by radio frequency magnetron sputtering method. The properties of ZnMnO thin films were investigated by high-resolution x-ray diffractometer (HRXRD),atomic force microscopy (AFM), UV-Vis spectrometer and room temperature photoluminescence (PL), under the influence of substrate temperature. The substrate temperature was varied from 300, 400 and 500°C. With increasing the substrate temperature, the structure of the films changed from cubic to hexagonal. The cubic ZnMnO thin films grown along [210] direction, while the hexagonal ones grown along [002] direction. The changes in surface morphology provided a proof on the structural transition. Also, decrease and increase of optical band gap is associated with cubic or hexagonal structure of the films.
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S. Masuda, K. Kitamura, Y. Okumura, and S. Miyatake, J. Appl. Phys. 93, 1624 (2003).
D. Chu, T. Hamada, K. Kato, and Y. Masuda, Phys. Status Solidi A 206, 718 (2009).
S. S. Shinde and K. Y. Rajpure, J. Alloys Comp. 522, 118 (2012).
J. M. Kim, P. Thiyagarajan, and S. W. Rhee, Thin Solid Films 518, 5860 (2010).
N. Akin, S. S. Cetin, M. Cakmak, T. Memmedli, and S. Ozcelik, J. Mater. Sci.: Mater. Electron. 24, 5091 (2013).
C. Guillen and J. Herrero, Phys. Status Solidi A 206, 1531 (2009).
E. Fortunato, L. Raniero, L. Silva, A. Goncalves, A. Pimentel, P. Barquinha, H. Aguas, L. Pereira, G. Goncalves, I. Ferreira, E. Elangovan, and R. Martins, Sol. Energy Mater. Sol. Cells 92, 1605 (2008).
S. Han, D. Z. Shen, J. Y. Zhang, Y. M. Zhao, D. Y. Jiang, Z. G. Ju, D. X. Zhao, and B. Yao, J. Alloys Comp. 485, 794 (2009).
K. Liu, M. Sakurai, and M. Aono, Sensors 10, 8604 (2010).
P. Kumar, H. K. Malik, A. Ghosh, R. Thangavel, and K. Asokan, Appl. Phys. Lett. 102, 221903 (2013).
F. Yakuphanoglu, S. Ilican, M. Caglar, and Y. Caglar, Superlatt. Microstruct. 47, 732 (2010).
A. Boukhachem, B. Ouni, M. Karyaoui, A. Madani, R. Chtourou, and M. Amlouk, Mater. Sci. Semicond. Proc. 15, 282 (2012).
X. Y. Li, H. J. Li, M. Yuan, Z. J. Wang, Z. Y. Zhou, and R. B. Xu, J. Alloys Comp. 509, 3025 (2011).
H. K. Yadav, K. Sreenivas, and V. Gupta, J. Appl. Phys. 99, 083507 (2006).
H. J. Lin, D. Y. Lin, J. Z. Hong, C. S. Yang, C. M. Lin, and C. F. Lin, Phys. Status Solidi C 6, 1468 (2009).
A. U. Ubale and V. P. Deshpande, J. Alloys Comp. 500, 138 (2010).
W. M. Hlaingo, L. V. Saraf, M. H. Engelhard, V. Shutthanandan, L. Bergman, J. Huso, and M. D. McCluskey, J. Appl. Phys. 105, 013715 (2009).
C. Liu, F. Yun, B. Xiao, S. J. Cho, Y. T. Moon, and H. Morkoc, J. Appl. Phys. 97, 126107 (2005).
Y. M. Kim, M. Yoon, I. W. Park, Y. J. Park, and J. H. Lyou, Solid State Commun. 129, 175 (2004).
J. Zhang, X. Z. Li, J. Shi, Y. F. Lu, and D. J. Sellmyer, J. Phys.: Condens. Matter 19, 036210 (2007).
M. D. Mukadam and S. M. Yusuf, Phys. B 403, 2602 (2008).
S. W. Jung, S. J. An, G. C. Yi, C. U. Jung, S. I. Lee, and S. Cho, Appl. Phys. Lett. 80, 4561 (2002).
H. P. Klug and L. E. Alexander, X-Ray Diffraction Procedures (Wiley, New York, 1974).
N. Gopalakrishnan, L. Balakrishnan, B. Srimathy, M. Senthil Kumar, and T. Balasubramanian, Phys. Status Solidi A 207, 2180 (2010).
R. Ramirez-Bon, N. C. Sandoval-Inda, F. J. Espinoza-Beltran, M. Sotelo-Lerma, O. Zelaya-Angel, and C. Falcony, J. Phys.: Condens. Matter 9, 10051 (1997).
J. I. Pankove, Optical Process in Semiconductors (Dover, New York, 1976).
R. Baghdad, B. Kharroubi, A. Abdiche, M. Bousmaha, M. A. Bezzerrouk, A. Zeinert, M. El Marssi, and K. Zellama, Superlatt. Microstruct. 52, 711 (2012).
H. K. Yadav, K. Sreenivas, and V. Gupta, J. Appl. Phys. 99, 083507 (2006).
W. Liu, X. Tang, and Z. Tang, J. Appl. Phys. 114, 123911 (2013).
A. B. Djurisic and Y. H. Leung, Small 2, 944 (2006).
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Pashaei, P., Akin, N., Ceren Baskose, U. et al. Influence of substrate temperature on structural and optical properties of RF sputtered ZnMnO thin films. Semiconductors 49, 780–784 (2015). https://doi.org/10.1134/S1063782615060184
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DOI: https://doi.org/10.1134/S1063782615060184