Abstract
The results of the atomic-force microscopy, optical-absorption spectroscopy, and photoluminescence spectroscopy of porous silicon carbide (por-SiC) produced by anodic etching are reported. Analysis of the data shows that the cubic SiC phase is lacking in the porous layer and the photoluminescence signal from por-SiC at the excitation photon energy hνex ≤ E g appears due to the formation of radiative centers associated with impurity atoms and surface defects produced upon anodic etching of the sample and subsequent treatment to uncover the pores.
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Original Russian Text © N.I. Berezovska, Yu.Yu. Bacherikov, R.V. Konakova, O.B. Okhrimenko, O.S. Lytvyn, L.G. Linets, A.M. Svetlichnyi, 2014, published in Fizika i Tekhnika Poluprovodnikov, 2014, Vol. 48, No. 8, pp. 1055–1058.
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Berezovska, N.I., Bacherikov, Y.Y., Konakova, R.V. et al. Characterization of porous silicon carbide according to absorption and photoluminescence spectra. Semiconductors 48, 1028–1030 (2014). https://doi.org/10.1134/S1063782614080041
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DOI: https://doi.org/10.1134/S1063782614080041