Abstract
The temperature dependencies of the luminescence spectra of 5-nm-diameter CdSe semiconductor nanocrystals synthesized by colloidal-chemistry methods are investigated. The two bands observed in these spectra around 2.01 and 1.37 eV correspond to band-to-band transitions and luminescence of defect states, respectively. A model explaining the temperature behavior of the luminescence band intensities both upon cooling and heating is put forward. A new modification of spectrally resolved thermostimulated luminescence technique making it possible to determine the activation energies and the character of traps responsible for the temperature dependence of the luminescence intensities is suggested. This technique is used to obtain the activation energies of the emission and capture of electrons at traps (190 and 205 meV, respectively) and to determine the depth of the electron level (57 meV) responsible for luminescence in the 1.37-eV region.
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Original Russian Text © A.V. Katsaba, V.V. Fedyanin, S.A. Ambrozevich, A.G. Vitukhnovsky, A.N. Lobanov, A.S. Selyukov, R.B. Vasiliev, I.G. Samatov, P.N. Brunkov, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 10, pp. 1339–1343.
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Katsaba, A.V., Fedyanin, V.V., Ambrozevich, S.A. et al. Characterization of defects in colloidal CdSe nanocrystals by the modified thermostimulated luminescence technique. Semiconductors 47, 1328–1332 (2013). https://doi.org/10.1134/S1063782613100138
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DOI: https://doi.org/10.1134/S1063782613100138