Abstract
The main experimental results of studies of the photoluminescence of silicon nanocrystals and theoretical methods developed for the description of optical processes occurring in them are reviewed. Special attention is focused on silicon nanocrystals in the SiO2 matrix that were the object of most of the studies. Two fundamental theoretical methods described in detail are the multiband effective-mass method and the tight-binding method which have found wide application in simulating various processes occurring in nanostructures. A phenomenological model for excitons self-trapped on the surface of oxidized silicon nanocrystals, which has been recently developed on the basis of experimental results obtained by femtosecond spectroscopy, is reported.
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Original Russian Text © O.B. Gusev, A.N. Poddubny, A.A. Prokofiev, I.N. Yassievich, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 2, pp. 147–167.
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Gusev, O.B., Poddubny, A.N., Prokofiev, A.A. et al. Light emission from silicon nanocrystals. Semiconductors 47, 183–202 (2013). https://doi.org/10.1134/S1063782613020103
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DOI: https://doi.org/10.1134/S1063782613020103