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Effect of the tin content on the composition and optical and electrical properties of ITO films deposited onto silicon and glass by ultrasonic spray pyrolysis

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Abstract

With the aim of optimizing the properties of tin-doped indium oxide (ITO) films as applied to silicon solar cells, ∼100-nm-thick ITO films were deposited onto (nn +)-Cz-Si and glass substrates by ultrasonic spray pyrolysis in argon at a temperature of 380°C. The relative Sn and In content in the film-forming solution was varied in the range of [Sn]/[In] = 0–12 at %. Optimal parameters are exhibited by the films produced at [Sn]/[In] = 2–3 at % in the solution ([Sn]/([In] + [Sn]) = 5.2–5.3 at % in the film). For such films deposited onto glass substrates, the effective absorptance weighted over the solar spectrum in the wavelength range from 300 to 1100 nm is 1.6–2.1%. The sheet resistance R s of the films deposited onto silicon and glass is, correspondingly, 45–55 and 165–175 Ω▭−1. After eight months of storage in air, the resistance R s of the optimal films remained unchanged; for the other films, the resistance R s increased: for the films on silicon and glass, the resistance R s became up to 2 and 14 times higher, respectively.

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Authors and Affiliations

  1. Skobel’tsyn Institute of Nuclear Physics, Moscow State University, Moscow, 119991, Russia

    G. G. Untila, T. N. Kost, A. B. Chebotareva & M. A. Timofeyev

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  1. G. G. Untila
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  2. T. N. Kost
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  3. A. B. Chebotareva
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  4. M. A. Timofeyev
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Correspondence to G. G. Untila.

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Original Russian Text © G.G. Untila, T.N. Kost, A.B. Chebotareva, M.A. Timofeyev, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 7, pp. 984–990.

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Untila, G.G., Kost, T.N., Chebotareva, A.B. et al. Effect of the tin content on the composition and optical and electrical properties of ITO films deposited onto silicon and glass by ultrasonic spray pyrolysis. Semiconductors 46, 962–968 (2012). https://doi.org/10.1134/S1063782612070202

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