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Physics of switching and memory effects in chalcogenide glassy semiconductors

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Abstract

Switching and memory effects in chalcogenide glassy semiconductors have been known for nearly fifty years. However, the physics of these effects remains unclear. Recent interest in this problem is caused by active developments of a new generation nonvolatile memory based on the chalcogenide glass-crystal phase transition. In this paper, we review the main experimental features of switching and memory effects, review and analyze the models of the switching effect. Consider the main characteristics of phase-change memory cells made of various materials. On these grounds, the main advantages of modern phase-change memory cells are presented in comparison with first-generation memory elements.

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Authors and Affiliations

  1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, ul. Polytekhnicheskaya 26, St.Petersburg, 194021, Russia

    N. A. Bogoslovskiy & K. D. Tsendin

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  1. N. A. Bogoslovskiy
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  2. K. D. Tsendin
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Correspondence to N. A. Bogoslovskiy.

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Original Russian Text © N.A. Bogoslovskiy, K.D. Tsendin, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 5, pp. 577–608.

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Bogoslovskiy, N.A., Tsendin, K.D. Physics of switching and memory effects in chalcogenide glassy semiconductors. Semiconductors 46, 559–590 (2012). https://doi.org/10.1134/S1063782612050065

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  • DOI: https://doi.org/10.1134/S1063782612050065

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