Abstract
Deep-level transient spectroscopy (DLTS) has been used to study p-n junctions fabricated by implantation of boron into epitaxial 4H-SiC films with n-type conductivity and the donor concentration (8–9) × 1014 cm−3. A DLTS signal anomalous in sign is observed; this signal is related to recharging of deep compensating boron-involved centers in the n-type region near the metallurgical boundary of the p-n junction.
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Original Russian Text © P.A. Ivanov, A.S. Potapov, T.P. Samsonova, O. Korol’kov, N. Sleptsuk, 2011, published in Fizika i Tekhnika Poluprovodnikov, 2011, Vol. 45, No. 10, pp. 1358–1362.
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Ivanov, P.A., Potapov, A.S., Samsonova, T.P. et al. A DLTS study of 4H-SiC-based p-n junctions fabricated by boron implantation. Semiconductors 45, 1306–1310 (2011). https://doi.org/10.1134/S1063782611100101
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DOI: https://doi.org/10.1134/S1063782611100101