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A new InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT)

  • Physics of Semiconductor Devices
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Abstract

Excellent characteristics of an InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT) are first demonstrated. The insertion of a thin n-GaAs emitter layer between tynneling confinement and base layers effectivelty eliminates the potential spike at base-emitter junction and reduces the collector-emitter offset voltage, while the thin InGaP tunneling confinement layer is employed to reduce the transporting time across emitter region for electrons and maintain the good confinement effect for holes. Experimentally, the studied T-HEBN exhibits a maximum current gain of 285, a relatively low offset voltage of 40 mW, and a current-gain cutoff frequency of 26.4 GHz.

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Authors and Affiliations

  1. Department of Electronic Engineering, National Kaohsiung Normal University, 802, Kaohsiung, Taiwan

    Jung-Hui Tsai, Yung-Chun Ma & Sheng-Shiun Ye

  2. Department of Electronic Engineering, Feng Chia University, 100, Taichung, Taiwan

    Ching-Sung Lee

  3. Department of Electrical Engineering, National Taiwan Ocean University, Keelung, Taiwan

    Wen-Shiung Lour

Authors
  1. Jung-Hui Tsai
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  2. Ching-Sung Lee
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  3. Wen-Shiung Lour
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  4. Yung-Chun Ma
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  5. Sheng-Shiun Ye
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Correspondence to Jung-Hui Tsai.

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Tsai, JH., Lee, CS., Lour, WS. et al. A new InGaP/GaAs tunneling heterostructure-emitter bipolar transistor (T-HEBT). Semiconductors 45, 646–649 (2011). https://doi.org/10.1134/S1063782611050137

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  • DOI: https://doi.org/10.1134/S1063782611050137

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