Abstract
Advantages of the concept of high-powered semiconductor nanoheterostructure lasers for the spectral range 1700–1800 nm, grown by MOCVD in the InGaAsP/InP solid solution system, have been experimentally demonstrated. It has been found that using an expanded waveguide enables reduction to 2 cm−1 of the internal optical loss in quantum-well asymmetric separate-confinement double InGaAsP/InP heterostructures emitting at a wavelength of 1.76 µm. The heterostructures developed have been used to create multimode lasers with a room-temperature CW output power of 2.5 W in an aperture of 100 µm. It is shown that use of highly stressed quantum-well InGaAs layers as the active region makes it possible to obtain characteristic temperatures T 0 = 50–60 K.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
S. Vatnik, E. Balashov, A. Pavljuk, E. Golikova, and A. Lyutetskiy, Opt. Commun. 220, 397 (2003).
E. Sorokin, S. Naumov, and I. T. Sorokina, IEEE J. Sel. Topics Quant. Electron. 11, 690 (2005).
E. G. Golikova, V. A. Kureshov, A. V. Lyutetskii, N. A. Pikhtin, N. V. Fetisova, A. Yu. Leshko, Yu. A. Ryaboshtan, S. O. Slipchenko, Z. N. Sokolova, A. D. Bondarev, and I. S. Tarasov, Pis’ma Zh. Tekh. Fiz. 28(3), 66 (2002) [Tech. Phys. Lett. 28, 113 (2002)].
A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, A. Yu. Leshko, V. V. Shamakhov, A. Yu. Andreev, Yu. A. Ryaboshtan, E. G. Golikova, and I. S. Tarasov, Fiz. Tekh. Poluprovodn. 37, 1394 (2003) [Semiconductors 37, 1356 (2003)].
A. V. Lyutetskii, N. A. Pikhtin, S. O. Slipchenko, N. V. Fetisova, A. Yu. Leshko, Yu. A. Ryaboshtan, E. G. Golikova, and I. S. Tarasov, Pis’ma Zh. Tekh. Fiz. 29(7), 55 (2003) [Tech. Phys. Lett. 29, 290 (2003)].
A. V. Lyutetskii, K. S. Borshchev, A. D. Bondarev, T. A. Nalet, N. A. Pikhtin, S. O. Slipchenko, N. V. Fetisova, M. A. Khomylev, A. A. Marmalyuk, Yu. A. Ryaboshtan, V. A. Simakov, and I. S. Tarasov, Fiz. Tekh. Poluprovodn. 41, 883 (2007) [Semiconductors 41, 860 (2007)].
N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, and I. S. Tarasov, Fiz. Tekh. Poluprovodn. 38, 374 (2004) [Semiconductors 38, 360 (2004)].
N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, A. L. Stankevich, D. A. Vinokurov, I. S. Tarasov, and Zh. I. Alferov, Electron. Lett. 40, 1413 (2004).
D. A. Vinokurov, S. A. Zorina, V. A. Kapitonov, A. V. Murashova, D. N. Nikolaev, A. L. Stankevich, M. A. Kho- mylev, V. V. Shamakhov, A. Yu. Leshko, A. V. Lyutetskii, T. A. Nalet, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, and I. S. Tarasov, Fiz. Tekh. Poluprovodn. 39, 388 (2005) [Semiconductors 39, 370 (2005)].
S. O. Slipchenko, D. A. Vinokurov, N. A. Pikhtin, Z. N. Sokolova, A. L. Stankevich, I. S. Tarasov, and Zh. I. Alferov, Fiz. Tekh. Poluprovodn. 38, 1477 (2004) [Semiconductors 38, 1430 (2004)].
N. C. Casey, Jr. and M. B. Panish, Heterostructure Lasers (Academic, New York, 1978; Mir, Moscow, 1981).
X. He, D. Xu, A. Ovtchinnikov, S. Wilson, F. Malarayap, R. Supe, and R. Patel, Electron. Lett. 35, 1343 (1999).
A. V. Lyutetskii, K. S. Borshchev, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, and I. S. Tarasov, Fiz. Tekh. Poluprovodn. 42, 106 (2008) [Semiconductors 42, 104 (2008)].
J. S. Major, D. W. Nam, J. S. Osinski, and D. F. Welch, IEEE Photon. Technol. Lett. 5, 594 (1993).
H. K. Choi and S. J. Eglash, IEEE J. Quant. Electron. 27, 1555 (1991).
H. K. Choi and S. J. Eglash, Appl. Phys. Lett. 61, 1154 (1992).
E. G. Golikova, V. A. Kureshov, A. Yu. Leshko, A. V. Lyutetskii, N. A. Pikhtin, Yu. A. Ryaboshtan, G. A. Skrynnikov, I. S. Tarasov, and Zh. I. Alferov, Fiz. Tekh. Poluprovodn. 34, 886 (2000) [Semiconductors 34, 853 (2000)].
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © A.V. Lyutetskiy, N.A. Pikhtin, N.V. Fetisova, A.Yu. Leshko, S.O. Slipchenko, Z.N. Sokolova, Yu.A. Ryaboshtan, A.A. Marmalyuk, I.S. Tarasov, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 12, pp. 1646–1649.
Rights and permissions
About this article
Cite this article
Lyutetskiy, A.V., Pikhtin, N.A., Fetisova, N.V. et al. High-power diode lasers (λ = 1.7–1.8 µm) based on asymmetric quantum-well separate-confinement InGaAsP/InP heterostructures. Semiconductors 43, 1602–1605 (2009). https://doi.org/10.1134/S1063782609120057
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063782609120057