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A study of GaAs: Si/GaAs: C tunnel diodes grown by MOCVD

  • Physics of Semiconductor Devices
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Abstract

Technological modes in which high-efficiency GaAs: Si/GaAs: C tunneling structures can be fabricated by MOS-hydride epitaxy have been determined. It was demonstrated that use of C and Si dopants makes it possible to obtain a p-n junction with low diffusion spreading of dopant profiles. It was shown that fabrication of high-efficiency tunnel diodes requires that GaAs layers should be doped with acceptor and donor impurities to a level of ∼9 × 1019 cm−3. Tunnel diodes were fabricated using the tunnel structures and their current-voltage characteristics were studied. Peak current densities J p ≈ 1.53 kA cm−2 and a differential resistance R ≈ 30 mΩ under a reverse bias were obtained in the tunnel diodes.

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References

  1. J. P. van der Ziel and W. T. Tsang, Appl. Phys. Lett. 41, 499 (1982).

    Article  ADS  Google Scholar 

  2. J. Ch. Garsia, E. Rosencher, Ph. Collot, N. Laurent, J. L. Guyaux, B. Vinter, and J. Nagle, Appl. Phys. Lett. 71, 3752 (1997).

    Article  ADS  Google Scholar 

  3. S. G. Patterson, G. S. Petrich, R. J. Ram, and L. A. Kolodziejski, Electron. Lett. 35, 395 (1999).

    Article  Google Scholar 

  4. C. Hanke, L. Korte, B. D. Acklin, M. Behringer, G. Herrmann, J. Luff, B. De Odorico, M. Marchiano, and J. Wilhelmi, Proc. SPIE 3947, 50 (2000).

    Article  ADS  Google Scholar 

  5. S. G. Patterson, E. K. Lau, K. P. Pipe, and R. J. Ram, Appl. Phys. Lett. 77, 172 (2000).

    Article  ADS  Google Scholar 

  6. H. C. Casey and M. B. Panish, Heterostructure Lasers (Academic Press, New York, San Francisco, London, 1978), vol. 1.

    Google Scholar 

  7. V. V. Pasynkov and L. K. Chirkin, Semiconductor Devices (Vyssh. Shkola, Moscow, 1987), p. 177 [in Russian].

    Google Scholar 

  8. I. M. Vikulin and V. I. Stafeev, Physics of Semiconductor Devices (Sov. radio, Moscow, 1980), p. 10 [in Russian].

    Google Scholar 

  9. N. Watanabe, H. Ito, and T. Ishibashi, J. Cryst. Growth 147, 256 (1995).

    Article  ADS  Google Scholar 

  10. H. Li, F. Reinhardt, and S. Macomber, J. Cryst. Growth 256, 52 (2003).

    Article  ADS  Google Scholar 

  11. V. M. Lantratov, N. A. Kalyuzhnyĭ, S. A. Mintairov, N. Kh. Timoshina, M. Z. Shvarts, and V. M. Andreev, Fiz. Tekh. Poluprovodn. 41, 751 (2007) [Semiconductors 41, 727 (2007)].

    Google Scholar 

  12. D. A. Vinokurov, S. A. Zorina, V. A. Kapitonova, A. V. Murashova, D. N. Nikolaev, A. L. Stankevich, M. A. Khomylev, V. V. Shamakhov, A. Yu. Leshko, A. V. Lyutetskiĭ, T. A. Nalet, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, N. V. Fetisova, and I. S. Tarasov, Fiz. Tekh. Poluprovodn. 39, 388 (2005) [Semiconductors 39, 370 (2005)].

    Google Scholar 

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    D. A. Vinokurov, N. A. Pikhtin, N. V. Fetisova & I. S. Tarasov

  2. Stel’makh Polyus Research Institute, Federal State Unitary Enterprise, Moscow, 117342, Russia

    M. A. Ladugin, A. A. Marmalyuk, A. A. Padalitsa, V. A. Simakov & A. V. Sukharev

Authors
  1. D. A. Vinokurov
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  2. M. A. Ladugin
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  3. A. A. Marmalyuk
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  4. A. A. Padalitsa
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  5. N. A. Pikhtin
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  6. V. A. Simakov
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  7. A. V. Sukharev
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  8. N. V. Fetisova
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  9. V. V. Shamakhov
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  10. I. S. Tarasov
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Correspondence to D. A. Vinokurov.

Additional information

Original Russian Text © D.A. Vinokurov, M.A. Ladugin, A.A. Marmalyuk, A.A. Padalitsa, N.A. Pikhtin, V.A. Simakov, A.V. Sukharev, N.V. Fetisova, V.V. Shamakhov, I.S. Tarasov, 2009, published in Fizika i Tekhnika Poluprovodnikov, 2009, Vol. 43, No. 9, pp. 1253–1256.

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Vinokurov, D.A., Ladugin, M.A., Marmalyuk, A.A. et al. A study of GaAs: Si/GaAs: C tunnel diodes grown by MOCVD. Semiconductors 43, 1213–1216 (2009). https://doi.org/10.1134/S1063782609090206

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  • DOI: https://doi.org/10.1134/S1063782609090206

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