Skip to main content
SpringerLink
Log in

The effect of irradiation on the properties of SiC and devices based on this compound

  • Review
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

Issues related to the production of radiation defects in silicon carbide of various polytypes and with differing conductivity types and concentrations of charge carriers as a result of irradiation with high-energy particles in a wide range of their energies and masses (from electrons to heavy Bi ions) are considered. The effect of irradiation with high-energy particles on the optical and electrical characteristics of the devices based on SiC are also considered, including the devices that operate as detectors of nuclear radiation. Systematic trends (common to other semiconductors and characteristic of SiC) in the radiation-defect formation in SiC are established. The high radiation resistance of SiC is verified; it is shown that this radiation resistance can be increased at increased energies of incident particles and at higher temperatures of operation.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. C. Lind and D. C. Bardwell, J. Franklin Inst. 196, 521 (1923).

    Article  Google Scholar 

  2. M. S. Livingston and H. A. Bethe, Rev. Mod. Phys. 9, 245 (1937).

    Article  ADS  Google Scholar 

  3. M. Burton and G. K. Rollefson, Photochemistry (Prentice-Hall, New York, 1939).

    Google Scholar 

  4. S. S. Bhatnagar, K. G. Mathar, and K. L. Buthiraja, Z. Phys. Chem. (Leipzig) 163A, 8 (1933).

    Google Scholar 

  5. A. Smits, Z. Phys. Chem. (Leipzig) 152A, 432 (1930).

    Google Scholar 

  6. N. F. Mott and H. S. W. Massey, The Theory of Atomic Collisions, 3rd ed. (Clarendon, Oxford, 1965; Mir, Moscow, 1969).

    Google Scholar 

  7. E. P. Wigner, J. Appl. Phys. 17, 857 (1946).

    Article  ADS  Google Scholar 

  8. F. Seitz, Discuss. Faraday Soc. 5, 271 (1949).

    Article  Google Scholar 

  9. F. Keywell, Phys. Rev. 97, 1611 (1955).

    Article  ADS  Google Scholar 

  10. G. H. Kinchin and R. S. Pease, Prog. Phys. 18, 1 (1955) [Usp. Fiz. Nauk 60, 590 (1956).

    Article  ADS  Google Scholar 

  11. D. E. Harrison, Phys. Rev. 102, 1473 (1956).

    Article  ADS  MathSciNet  Google Scholar 

  12. N. Bohr, The Penetration of Atomic Particles through Matter, 3rd ed. (Munksgaard, Copenhagen, 1960; Inostrannaya Literatura, Moscow, 1960).

    Google Scholar 

  13. G. J. Dienes and G. H. Vineyard, Radiation Effects in Solids (Interscience, New York, 1957; Inostrannaya Literatura, Moscow, 1960).

    MATH  Google Scholar 

  14. V. S. Vavilov and N. A. Ukhin, Radiation Effects in Semiconductors and Semiconductor Devices (Atomizdat, Moscow, 1969) [in Russian].

    Google Scholar 

  15. Problems in Radiation Technology of Semiconductors, Ed. by L. S. Smirnov (Nauka, Novosibirsk, 1980) [in Russian].

    Google Scholar 

  16. V. S. Vavilov, B. M. Gorin, N. S. Danilin, A. E. Kiv, Yu. A. Nurov, and V. I. Shakhovtsov, Radiation Methods in Solid-State Electronics (Radio i Svyaz’, Moscow, 1990) [in Russian].

    Google Scholar 

  17. V. M. Gusev, K. D. Demakov, M. G. Kasaganova, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 9, 1238 (1975) [Sov. Phys. Semicond. 9, 820 (1975)].

    Google Scholar 

  18. E. V. Kalinina, N. K. Prokof’eva, A. V. Suvorov, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 12, 2305 (1978) [Sov. Phys. Semicond. 12, 1372 (1978)].

    Google Scholar 

  19. G. Lindstrom, M. Moll, and E. Fretwurst, Nucl. Instrum. Methods Phys. Res. A 426, 1 (1999).

    Article  ADS  Google Scholar 

  20. Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe, Ed. by M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur (Wiley, New York, 2001).

    Google Scholar 

  21. A. L. Barry, B. Lehman, D. Fritsch, and D. Brauning, IEEE Trans. Nucl. Sci. 38, 1111 (1991).

    Article  ADS  Google Scholar 

  22. A. A. Lebedev, A. M. Ivanov, and N. B. Strokan, Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 129 (2004) [Semiconductors 38, 125 (2004)].

    Google Scholar 

  23. L. W. Aukerman, H. C. Corton, R. K. Willardson, and V. E. Bryson, in Silicon Carbide, Ed. by J. R. O’Connor and J. Smiltens (Pergamon, Oxford, 1959), p. 388.

    Google Scholar 

  24. R. V. Babcock and H. C. Chang, Neutron Dosimetry (International Atomic Energy Agency, Vienna, 1963), Vol. 1, p. 613.

    Google Scholar 

  25. P. C. Capera, P. Malinaric, R. B. Campbell, and J. Ostroski, IEEE Trans. Nucl. Sci. 11(6), 262 (1964).

    ADS  Google Scholar 

  26. G. F. Kholuyanov and B. V. Gavrilovskiĭ, Fiz. Tekh. Poluprovodn. (Leningrad) 2, 573 (1968) [Sov. Phys. Semicond. 2, 472 (1968)].

    Google Scholar 

  27. J. J. Sumakeris, M. K. Das, Seoyong Ha, et al., Mater. Sci. Forum 483–485, 155 (2005).

    Google Scholar 

  28. N. B. Strokan, A. M. Ivanov, E. V. Kalinina, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 39, 382 (2005) [Semiconductors 39, 364 (2005)].

    Google Scholar 

  29. P. A. Ivanov, M. E. Levinshteĭn, T. T. Mnatsakanov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 39, 897 (2005) [Semiconductors 39, 861 (2005)].

    Google Scholar 

  30. Advances in Silicon Carbide Processing and Applications, Ed. by S. E. Saddow and A. Agarwal (Artech House, Boston, 2005).

    Google Scholar 

  31. L. S. Stil’bans, Physics of Semiconductors (Sovetskoe Radio, Moscow, 1967), p. 167 [in Russian].

    Google Scholar 

  32. V. S. Balandovich and G. N. Violina, Cryst. Lattice Defects Amorphous Mater. 13, 189 (1987).

    Google Scholar 

  33. J. Schneider and K. Maier, Physica B (Amsterdam) 185, 199 (1993).

    ADS  Google Scholar 

  34. A. I. Girka, V. A. Kuleshin, A. D. Mokroshin, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 23, 2159 (1989) [Sov. Phys. Semicond. 23, 1337 (1989)].

    Google Scholar 

  35. H. Inui, H. Mori, and H. Fujuta, Philos. Mag. B 61, 107 (1990).

    Article  Google Scholar 

  36. N. Son, E. Sörman, W. Chen, et al., Phys. Rev. B 55, 2863 (1997).

    Article  ADS  Google Scholar 

  37. H. Itoh, T. Ohshima, M. Yoshikawa, et al., Phys. Status Solidi A 162, 173 (1997).

    Article  ADS  Google Scholar 

  38. A. Kawasuso, H. Itoh, D. Cha, and S. Okada, Mater. Sci. Forum 264–268, 611 (1998).

    Google Scholar 

  39. A. Kawasuso, F. Redmann, R. Krause-Rehberg, et al., J. Appl. Phys. 90, 3377 (2001).

    Article  ADS  Google Scholar 

  40. A. Kawasuso, F. Redmann, R. Krause-Rehberg, et al., Phys. Status Solidi B 223, R8 (2001).

    Article  ADS  Google Scholar 

  41. T. Staab, L. M. Torpo, M. J. Puska, and R. M. Nieminen, Mater. Sci. Forum 353–356, 533 (2001).

    Google Scholar 

  42. A. Kawasuso, F. Redmann, R. Krause-Rehberg, et al., Appl. Phys. Lett. 79, 3950 (2001).

    Article  ADS  Google Scholar 

  43. G. Brauer, W. Anward, E.-M. Nicht, et al., Phys. Rev. B 54, 2512 (1996).

    Article  ADS  Google Scholar 

  44. E. Sörman, N. T. Son, W. M. Chen, et al., Phys. Rev. B 61, 2613 (2000).

    Article  ADS  Google Scholar 

  45. Mt. Wagner, N. Q. Thinh, N. T. Son, et al., Mater. Sci. Forum 389–393, 501 (2002).

    Google Scholar 

  46. A. Kawasuso, M. Yoshikawa, M. Maekawa, et al., Mater. Sci. Forum 433–436, 477 (2003).

    Google Scholar 

  47. C. Seitz, A. A. Rempel, A. Mageri, et al., Mater. Sci. Forum 433–436, 289 (2003).

    Google Scholar 

  48. N. T. Son, P. N. Hai, Mt. Wagner, et al., Semicond. Sci. Technol. 14, 1141 (1999).

    Article  ADS  Google Scholar 

  49. V. Ya. Bratus, I. N. Makeeva, S. M. Okulov, et al., Mater. Sci. Forum 353–356, 517 (2001).

    Google Scholar 

  50. D. Cha, H. Itoh, N. Morishita, et al., Mater. Sci. Forum 264–268, 615 (1998).

    Google Scholar 

  51. H. Itoh, A. Yedono, T. Ohshima, et al., Appl. Phys. A: Mater. Sci. Process. 65, 315 (1997).

    Article  ADS  Google Scholar 

  52. S. Kanazawa, M. Okada, T. Nozaki, et al., Mater. Sci. Forum 389–393, 521 (2002).

    Google Scholar 

  53. N. T. Son, P. N. Hai, A. Shuja, et al., Mater. Sci. Forum 338–342, 821 (2000).

    Google Scholar 

  54. N. T. Son, P. N. Hai, and E. Janzén, Phys. Rev. B 63, R201 201 (2001).

  55. A. Gali, B. Aradi, P. Deak, et al., Phys. Rev. Lett. 84, 4926 (2000).

    Article  ADS  Google Scholar 

  56. V. Ya. Bratus, T. T. Petrenko, H. J. von Bandeleben, et al., Appl. Surf. Sci. 184, 229 (2001).

    Article  ADS  Google Scholar 

  57. N. T. Son, P. N. Hai, and E. Janzén, Phys. Rev. Lett. 87, 045 502 (2001).

    Google Scholar 

  58. T. Umeda, J. Isoya, N. Morishita, et al., Phys. Rev. B 69, R121 201 (2004).

  59. L. Torpo, M. Marlo, T. E. M. Staab, and R. M. Nieminen, J. Phys.: Condens. Matter 13, 6203 (2001).

    Article  ADS  Google Scholar 

  60. V. Ya. Bratus, T. T. Petrenko, S. M. Okulov, and T. L. Petrenko, Phys. Rev. B 71, 125 202 (2005).

  61. Z. Zolnai, N. T. Son, B. Magnusson, et al., Mater. Sci. Forum 457–460, 473 (2004).

    Google Scholar 

  62. V. S. Vaĭner and V. S. Il’in, Fiz. Tverd. Tela (Leningrad) 23, 3659 (1981) [Sov. Phys. Solid State 23, 2126 (1981)].

    Google Scholar 

  63. N. T. Son, B. Magnusson, and E. Janzén, Appl. Phys. Lett. 81, 3945 (2002).

    Article  ADS  Google Scholar 

  64. M. Bockstedte and O. Pankratov, Mater. Sci. Forum 338–342, 949 (2000).

    Google Scholar 

  65. S. Dannefaer, V. Avalos, M. Syvajarvi, and R. Yakimova, Mater. Sci. Forum 433–436, 173 (2003).

    Google Scholar 

  66. S. Dannefaer and D. Kerr, Diamond Relat. Mater. 13, 157 (2004).

    Article  Google Scholar 

  67. S. Dannefaer, V. Avalos, and R. Yakimova, Mater. Sci. Forum 483–485, 481 (2005).

    Google Scholar 

  68. V. B. Pinheiro, T. Lingner, F. Caudepon, et al., Mater. Sci. Forum 457–460, 517 (2004).

    Google Scholar 

  69. M. Boskstedle, M. Heid, A. Mattausch, and O. Pankratov, Mater. Sci. Forum 433–436, 471 (2003).

    Google Scholar 

  70. Th. Lingner, S. Greulich-Weber, J.-M. Spaeth, et al., Phys. Rev. B 64, 245212 (2001).

  71. W. J. Choyke and Lyle Patrik, Phys. Rev. B 4, 1843 (1971).

    Article  ADS  Google Scholar 

  72. E. Rauls, U. Gerstmann, M. V. B. Pinheiro, et al., Mater. Sci. Forum 483–485, 465 (2005).

    Google Scholar 

  73. E. Rauls, Th. Frauenheim, A. Gali, and P. Deak, Phys. Rev. B 68, 155 208 (2003).

  74. L. Torpo, R. M. Nieminen, K. E. Laasonen, and S. Poykko, Appl. Phys. Lett. 74, 221 (1999).

    Article  ADS  Google Scholar 

  75. H. J. von Bandeleben, J. I. Cantin, L. Henry, and M. F. Barthe, Phys. Rev. B 62, 10841 (2000).

    Google Scholar 

  76. H. J. von Bandeleben, J. I. Cantin, P. Baranov, and E. M. Mokhov, Mater. Sci. Forum 353–356, 509 (2001).

    Google Scholar 

  77. X. Kerbiriou, M.-F. Barthe, S. Esnouf, et al., in Proceedings of International Conference on Silicon Carbide and Related Materials, ICSCRM2005 (Pittsburg, USA, 2005), No. 63, p. 43.

    Google Scholar 

  78. H. J. von Bandeleben and J. I. Cantin, Appl. Surf. Sci. 184, 237 (2001).

    Article  ADS  Google Scholar 

  79. B. Aradi, A. Gali, P. Deak, et al., Phys. Rev. B 63, 245 202 (2001).

  80. A. A. Rempel, W. Sprengel, K. Blaurock, et al., Phys. Rev. Lett. 89, 185 501 (2002).

  81. M.-F. Barthe, L. Henry, S. Arpiainen, and G. Blondiaux, Mater. Sci. Forum 483–485, 473 (2005).

    Google Scholar 

  82. S. Arpiainen, K. Saarinen, P. Hautojärvi, et al., Phys. Rev. B 66, 075 206 (2002).

  83. J. W. Steeds, S. Furkert, J. M. Hayes, and W. Sullivan, Mater. Sci. Forum 457–460, 561 (2004).

    Google Scholar 

  84. T. Egilsson, J. P. Bergman, I. G. Ivanov, et al., Phys. Rev. B 59, 1956 (1999).

    Article  ADS  Google Scholar 

  85. G. A. Evans, J. W. Steeds, L. Ley, et al., Phys. Rev. B 66, 035 204 (2002).

  86. J. W. Steeds, G. A. Evans, S. Furkert, et al., Mater. Sci. Forum 433–436, 305 (2003).

    Google Scholar 

  87. J. M. Perlado, L. Malerba, A. Sanchez-Rubio, and T. Diaz de la Rubia, J. Nucl. Mater. 276, 235 (2000).

    Article  ADS  Google Scholar 

  88. F. Gao, E. J. Bylaska, W. J. Weber, and L. R. Corrales, Nucl. Instrum. Methods Phys. Res. B 180, 286 (2001).

    Article  ADS  Google Scholar 

  89. A. Mattausch, M. Bockstedle, and O. Pankratov, Mater. Sci. Forum 353–356, 323 (2001).

    Article  Google Scholar 

  90. W. Sullivan, J. W. Steeds, H. J. von Bandeleben, and J.-L. Cantin, in Proceedings of International Conference on Silicon Carbide and Related Materials, ICSCRM2005 (Pittsburg, USA, 2005), No. 66.

    Google Scholar 

  91. W. Windl, T. J. Lenosky, J. D. Kress, and A. F. Voter, Nucl. Instrum. Methods Phys. Res. B 141, 61 (1998).

    Article  ADS  Google Scholar 

  92. R. Devanathan and W. J. Weber, J. Nucl. Mater. 278, 258 (2000).

    Article  ADS  Google Scholar 

  93. L. Malerba and J. M. Perlado, Phys. Rev. B 65, 045 202 (2002).

    Google Scholar 

  94. F. Gao, W. J. Weber, and R. Devanathan, Nucl. Instrum. Methods Phys. Res. B 191, 487 (2002).

    Article  ADS  Google Scholar 

  95. Problems in Radiation Technology of Semiconductors, Ed. by L. S. Smirnov (Nauka, Novosibirsk, 1980), p. 256 [in Russian].

    Google Scholar 

  96. In-Tae Bae, M. Ishimaru, and Y. Hirotsu, Mater. Sci. Forum 389–393, 467 (2002).

    Article  Google Scholar 

  97. R. Devanathan, W. J. Weber, and F. Gao, J. Appl. Phys. 90, 2303 (2001).

    Article  ADS  Google Scholar 

  98. J. W. Steeds, F. Carosella, G. A. Evans, et al., Mater. Sci. Forum 353–356, 381 (2001).

    Article  Google Scholar 

  99. S. C. Sridhara, P. O. A. Persson, F. H. C. Carlsson, et al., Mater. Res. Soc. Symp. Proc. 640, H6.5.1 (2001).

    Google Scholar 

  100. W. Sullivan and J. W. Steeds, in Proceedings of International Conference on Silicon Carbide and Related Materials, ICSCRM2005 (Pittsburg, USA, 2005), No. 45, p. 40.

  101. V. S. Ballandovich, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 1314 (1999) [Semiconductors 33, 1188 (1999)].

    Google Scholar 

  102. T. Dalibor, G. Pensl, H. Matsunami, et al., Phys. Status Solidi A 162, 199 (1997).

    Article  ADS  Google Scholar 

  103. G. Pensl and W. J. Choyke, Physica B (Amsterdam) 185, 264 (1993).

    ADS  Google Scholar 

  104. C. Hemmingsson, N. T. Son, O. Kordina, et al., J. Appl. Phys. 84, 704 (1998).

    Article  ADS  Google Scholar 

  105. C. Hemmingsson, N. T. Son, and E. Janzén, Appl. Phys. Lett. 74, 839 (1999).

    Article  ADS  Google Scholar 

  106. M. Gong, S. Fung, C. D. Beling, and Z. You, J. Appl. Phys. 85, 7604 (1999).

    Article  ADS  Google Scholar 

  107. C. Hemmingsson, N. T. Son, O. Kordina, et al., J. Appl. Phys. 81, 6155 (1997).

    Article  ADS  Google Scholar 

  108. C. G. Hemmingsson, N. T. Son, A. Ellison, et al., Phys. Rev. B 58, R10119 (1998).

  109. J. P. Doyle, M. K. Linnarsson, P. Pellegrino, et al., J. Appl. Phys. 84, 1354 (1998).

    Article  ADS  Google Scholar 

  110. A. Kawasuso, M. Weidner, F. Redmann, et al., Mater. Sci. Forum 389–393, 489 (2002).

    Google Scholar 

  111. L. Storasta, A. Henry, J. P. Bergman, and E. Janzén, Mater. Sci. Forum 457–460, 469 (2004).

    Article  Google Scholar 

  112. T. A. G. Eberlein, R. Jones, and P. R. Briddon, Phys. Rev. Lett. 90, 225 502 (2003).

    Google Scholar 

  113. I. Pintilie, L. Pintilie, K. Irmscher, and B. Thomas, Appl. Phys. Lett. 81, 4841 (2002).

    Article  ADS  Google Scholar 

  114. A. Castaldini, A. Cavallini, L. Rigutti, and F. Nava, Appl. Phys. Lett. 85, 3780 (2004).

    Article  ADS  Google Scholar 

  115. A. Castaldini, A. Cavallini, L. Rigutti, et al., J. Appl. Phys. 98, 053706 (2005).

    Google Scholar 

  116. G. Alfieri, E. V. Monakhov, B. G. Svensson, and M. K. Linnarsson, J. Appl. Phys. 98, 043518 (2005).

    Google Scholar 

  117. M. Gong, S. Fung, C. D. Beling, and Z. You, J. Appl. Phys. 85, 7120 (1999).

    Article  ADS  Google Scholar 

  118. B. E. Watt, Phys. Rev. 87, 1037 (1953).

    Article  ADS  Google Scholar 

  119. Neutron Transmutation Doping in Semiconductors, Ed. by E. Meese (Plenum, New York, 1979).

    Google Scholar 

  120. V. Nagest, J. W. Farmer, R. F. Davis, and H. S. Kong, Appl. Phys. Lett. 50, 1138 (1987).

    Article  ADS  Google Scholar 

  121. L. A. de Balona and J. H. N. Loubser, J. Phys. C 3, 2344 (1989).

    Article  ADS  Google Scholar 

  122. T. Wimbauer, B. K. Meyer, A. Hofstaetter, et al., Phys. Rev. 56, 7384 (1997).

    Article  ADS  Google Scholar 

  123. A. A. Lepneva, E. N. Mokhov, V. G. Oding, and A. S. Tregubova, Fiz. Tverd. Tela (Leningrad) 33, 2217 (1991) [Sov. Phys. Solid State 33, 1250 (1991)].

    Google Scholar 

  124. S. Kanazawa, I. Kimura, M. Okada, et al., Mater. Sci. Forum 338–342, 825 (2000).

    Article  Google Scholar 

  125. Th. Lingner, S. Greulich-Weber, and J.-M. Spaeth, Phys. Rev. B 64, 245 212 (2001).

  126. S. B. Orlinski, J. Schmidt, E. N. Mokhov, and P. G. Baranov, Phys. Rev. B 67, 125 207 (2003).

    Google Scholar 

  127. I. V. Ilyin, M. V. Muzafarova, E. N. Mokhov, et al., Physica B (Amsterdam) 340–342, 128 (2003).

    Google Scholar 

  128. I. V. Ilyin, M. V. Muzafarova, E. N. Mokhov, et al., Mater. Sci. Forum 483–485, 489 (2005).

    Google Scholar 

  129. Lyle Patrick and W. J. Choyke, J. Phys. Chem. Solids 34, 565 (1973).

    Article  ADS  Google Scholar 

  130. X. D. Chen, S. Fung, C. C. Ling, et al., J. Appl. Phys. 94, 3004 (2003).

    Article  ADS  Google Scholar 

  131. E. V. Kalinina, G. F. Kholuyanov, D. V. Davydov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 37, 1260 (2003) [Semiconductors 37, 1229 (2003)].

    Google Scholar 

  132. S. Kanazawa, M. Okada, J. Ishii, et al., Mater. Sci. Forum 389–393, 517 (2002).

    Article  Google Scholar 

  133. T. Troffer, C. Peppermuller, G. Pensl, et al., J. Appl. Phys. 80, 3739 (1996).

    Article  ADS  Google Scholar 

  134. S. Greulich-Weber, M. Freege, J.-M. Spaeth, et al., Solid State Commun. 93, 393 (1995).

    Article  ADS  Google Scholar 

  135. A. Gali, P. Deak, P. R. Briddon, and W. J. Choyke, Phys. Rev. B 61, 12 602 (2000).

    Google Scholar 

  136. S. Tamura, T. Kimoto, H. Matsunami, et al., Mater. Sci. Forum 338–342, 849 (2000).

    Article  Google Scholar 

  137. F. H. C. Carlsson, L. Storasta, B. Magnusson, et al., Mater. Sci. Forum 353–356, 555 (2001).

    Article  Google Scholar 

  138. C. Seitz, A. Magerl, R. Hock, et al., Mater. Res. Soc. Symp. Proc. 640, H6.4.1 (2001).

    Google Scholar 

  139. P. G. Baranov, I. V. Ilyin, E. N. Mokhov, et al., Mater. Sci. Forum 433–436, 503 (2003).

    Google Scholar 

  140. L. L. Snead, S. J. Zinkle, J. C. Hay, and M. C. Osborne, Nucl. Instrum. Methods Phys. Res. B 141, 123 (1998).

    Article  ADS  Google Scholar 

  141. N. Bohr and J. Lindhard, Mat. Fys. Medd. K. Dan. Vidensk. Selsk. 28(7), 17 (1954).

    Google Scholar 

  142. M. I. Markovich, É. N. Vologdin, and P. T. Barmin, in Physical Foundations of Radiation Technology of Solid-State Electronic Devices, Ed. by A. F. Lubchenko (Naukova Dumka, Kiev, 1978), p. 151 [in Russian].

    Google Scholar 

  143. V. V. Kozlovskiĭ, Modification of Semiconductors by Proton Beams (Nauka, St. Petersburg, 2003) [in Russian].

    Google Scholar 

  144. V. M. Kulakov, E. A. Ladygin, V. I. Shakhovtsov, et al., in Effect of Penetrating Radiation on Electronic Devices, Ed. by E. A. Ladygin (Sovetskoe Radio, Moscow, 1980), p. 34 [in Russian].

    Google Scholar 

  145. J. F. Zeigler, J. P. Biersack, and U. Littmamark, The Stopping and Range of Ions in Solids (Pergamon, Oxford, 1985).

    Google Scholar 

  146. H. Itoh, M. Yoshikawa, I. Nashiyama, et al., IEEE Trans. Nucl. Sci. 37, 1732 (1990).

    Article  ADS  Google Scholar 

  147. H. Itoh, M. Yoshikawa, I. Nashiyama, et al., J. Electron. Mater. 21, 707 (1992).

    ADS  Google Scholar 

  148. H. J. von Bandeleben, J. L. Cantin, I. Vickridge, and G. Battistig, Phys. Rev. B 62, 10 126 (2000).

    Google Scholar 

  149. M. M. Anikin, A. S. Zubrilov, A. A. Lebedev, et al., Fiz. Tekh. Poluprovodn. (Leningrad) 25, 479 (1991) [Sov. Phys. Semicond. 25, 289 (1991)].

    Google Scholar 

  150. L. Storasta, F. H. C. Carisson, S. G. Shidhara, et al., Mater. Sci. Forum 353–356, 431 (2001).

    Google Scholar 

  151. M. L. David, G. Alfieri, E. V. Monakhov, et al., Mater. Sci. Forum 433–436, 371 (2003).

    Google Scholar 

  152. D. M. Martin, H. Kontegaard Nielsen, P. Lévêque, and A. Hallén, Appl. Phys. Lett. 84, 1704 (2004).

    Article  ADS  Google Scholar 

  153. A. Galeckas, H. Kontegaard Nielsen, J. Linnros, et al., Mater. Sci. Forum 483–485, 327 (2005).

    Article  Google Scholar 

  154. W. Puff, A. G. Balogh, and P. Mascher, Mater. Sci. Forum 338–342, 965 (2000).

    Google Scholar 

  155. W. Puff, A. G. Balogh, and P. Mascher, Mater. Sci. Forum 338–342, 969 (2000).

    Google Scholar 

  156. D. T. Britton, M.-F. Barthe, C. Corbel, et al., Appl. Phys. Lett. 78, 1234 (2001).

    Article  ADS  Google Scholar 

  157. M.-F. Barthe, P. Desgardin, L. Henry, et al., Mater. Sci. Forum 389–393, 493 (2002).

    Article  Google Scholar 

  158. D. V. Davydov, A. A. Lebedev, V. V. Kozlovski, et al., Physica B (Amsterdam) 308–310, 641 (2001).

    Google Scholar 

  159. E. V. Bogdanova, V. V. Kozlovskiĭ, D. S. Rumyantsev, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 1211 (2004) [Semiconductors 38, 1176 (2004)].

    Google Scholar 

  160. N. B. Strokan, A. M. Ivanov, N. S. Savkina, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 841 (2004) [Semiconductors 38, 807 (2004)].

    Google Scholar 

  161. V. A. Kozlov, V. V. Kozlovskiĭ, A. N. Titkov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 1310 (2002) [Semiconductors 36, 1227 (2002)].

    Google Scholar 

  162. A. A. Lebedev, A. I. Veĭnger, D. V. Davydov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 897 (2000) [Semiconductors 34, 861 (2000)].

    Google Scholar 

  163. A. A. Lebedev, A. I. Veĭnger, D. V. Davydov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 1058 (2000) [Semiconductors 34, 1016 (2000)].

    Google Scholar 

  164. N. N. Gerasimenko, in Proceedings of 1st Moscow International Physical School of Institute of Theoretical and Experimental Physics (Zvenigorod, 1998), p. 173.

  165. L. Patrick and W. J. Choyke, Phys. Rev. B 5, 3253 (1972).

    Article  ADS  Google Scholar 

  166. A. Uedono, H. Itoh, T. Ohshima, et al., Jpn. J. Appl. Phys., Part 1 36, 6650 (1997).

    Article  ADS  Google Scholar 

  167. H. Wirth, W. Anwand, G. Brauer, et al., Mater. Sci. Forum 264–268, 729 (1998).

    Article  Google Scholar 

  168. W. Anwand, G. Brauer, P. G. Coleman, et al., Appl. Surf. Sci. 149, 148 (1999).

    Article  ADS  Google Scholar 

  169. S. G. Sridhara, D. G. Nizhner, R. P. Devaty, et al., Mater. Sci. Forum 264–268, 493 (1998).

    Google Scholar 

  170. M. Gong, C. V. Reddy, C. D. Beling, et al., Appl. Phys. Lett. 72, 2739 (1998).

    Article  ADS  Google Scholar 

  171. Y. Pasaud, W. Skorupa, and J. Stoemenos, Nucl. Instrum. Methods Phys. Res. B 120, 181 (1996).

    Article  ADS  Google Scholar 

  172. N. Chechenin, K. Bourdelle, A. Suvorov, and A. Kastilio-Vitlosh, Nucl. Instrum. Methods Phys. Res. B 65, 341 (1992).

    Article  ADS  Google Scholar 

  173. W. Jiang, W. J. Weber, S. Thevuthasan, and D. E. McCready, Nucl. Instrum. Methods Phys. Res. B 148, 557 (1999).

    Article  ADS  Google Scholar 

  174. W. Jiang, S. Thevuthasan, W. J. Weber, and R. Grötzschel, Nucl. Instrum. Methods Phys. Res. B 161–163, 501 (2000).

    Article  Google Scholar 

  175. N. Q. Khanh, Z. Zolnai, T. Lohner, et al., Nucl. Instrum. Methods Phys. Res. B 161–163, 424 (2000).

    Article  Google Scholar 

  176. A. Kawasuso, M. Weidner, F. Redmann, et al., Physica B (Amsterdam) 308–310, 660 (2001).

    Google Scholar 

  177. M. Weidner, T. Frank, G. Pensl, et al., Physica B (Amsterdam) 308–310, 633 (2001).

    Google Scholar 

  178. D. Åberg, A. Hallén, and B. G. Svensson, Physica B (Amsterdam) 273–274, 672 (1999).

    Google Scholar 

  179. Th. Frank, G. Pensl, Song Bai, et al., Mater. Sci. Forum 338–342, 753 (2000).

    Google Scholar 

  180. X. D. Chen, C. C. Ling, S. Fung, et al., Mater. Sci. Soc. Symp. Proc. 815, J5.5.1 (2004).

    Google Scholar 

  181. C. C. Ling, X. D. Chen, G. Brauer, et al., J. Appl. Phys. 98, 043 508 (2005).

  182. Th. Frank, M. Weidner, H. Itoh, and G. Pensl, Mater. Sci. Forum 353–356, 439 (2001).

    Article  Google Scholar 

  183. Y. Tanaka, N. Kobayashi, H. Okumura, et al., Mater. Sci. Forum 338–342, 909 (2000).

    Article  Google Scholar 

  184. A. Ruggiero, S. Libertino, M. Mauceri, et al., Mater. Sci. Forum 457–460, 493 (2004).

    Article  Google Scholar 

  185. A. Ruggiero, M. Zimbone, F. Roccaforte, et al., Mater. Sci. Forum 483–485, 485 (2005).

    Article  Google Scholar 

  186. F. Roccaforte, F. Giannazzo, C. Bongiomo, et al., Mater. Sci. Forum 483–485, 729 (2005).

    Google Scholar 

  187. F. Gao, W. J. Weber, and W. Jiang, Phys. Rev. B 63, 214 106 (2001).

  188. J. Slotte, K. Saarinen, M. S. Janson, et al., J. Appl. Phys. 97, 033 513 (2005).

  189. A. Uedono, S. Tanigawa, T. Frank, et al., J. Appl. Phys. 87, 4119 (2000).

    Article  ADS  Google Scholar 

  190. S. Nakashima, T. Mitani, J. Senzaki, et al., J. Appl. Phys. 97, 123 507 (2005).

  191. M. Bockstedle, A. Mattausch, and O. Pankratov, Mater. Sci. Forum 457–460, 715 (2004).

    Article  Google Scholar 

  192. M. Laube, F. Schmid, G. Pensl, et al., J. Appl. Phys. 92, 549 (2002).

    Article  ADS  Google Scholar 

  193. E. Kalinina, N. Strokan, A. Ivanov, et al., in Proceedings of 6th European Conference on Silicon Carbide and Related Materials, ECSCRM2006 (Newcastle, UK, 2006).

  194. M. S. Janson, J. Slotte, A. Yu. Kuznetsov, et al., J. Appl. Phys. 95, 57 (2004).

    Article  ADS  Google Scholar 

  195. M. S. Janson, A. Hallén, P. Godignon, et al., Mater. Sci. Forum 338–342, 889 (2000).

    Article  Google Scholar 

  196. W. Jiang and W. J. Weber, Phys. Rev. B 64, 125 206 (2001).

  197. J. Wong-Leung, M. S. Janson, and B. G. Svensson, J. Appl. Phys. 93, 8914 (2003).

    Article  ADS  Google Scholar 

  198. F. H. C. Carlsson, S. G. Sridhara, A. Hallén, et al., Mater. Sci. Forum 433–436, 345 (2003).

    Article  Google Scholar 

  199. W. Anwand, G. Brauer, P. G. Coleman, et al., Appl. Surf. Sci. 149, 140 (1999).

    Article  ADS  Google Scholar 

  200. J. Slotte, K. Saarinen, A. Yu. Kuznetsov, and A. Hallén, Physica B (Amsterdam) 308–310, 664 (2001).

    Google Scholar 

  201. Y. Zhang, W. J. Weber, W. Jiang, et al., J. Appl. Phys. 93, 8914 (2003).

    Article  Google Scholar 

  202. E. Wendler, A. Helf, and W. Wesch, Nucl. Instrum. Methods Phys. Res. B 141, 105 (1998).

    Article  ADS  Google Scholar 

  203. A. Yu. Kuznetsov, J. Wong-Leung, A. Hallén, et al., J. Appl. Phys. 94, 7112 (2003).

    Article  ADS  Google Scholar 

  204. V. A. Skuratov, A. E. Efimov, and D. L. Zagorskiĭ, Fiz. Tverd. Tela (St. Petersburg) 44, 165 (2002) [Phys. Solid State 44, 171 (2002)].

    Google Scholar 

  205. A. I. Girka, A. Yu. Dadyk, A. D. Mokrushin, et al., Sov. Tech. Phys. Lett. 15, 24 (1989).

    Google Scholar 

  206. A. I. Girka, A. D. Mokrushin, E. N. Mokhov, et al., Zh. Éksp. Teor. Fiz. 97, 578 (1990) [Sov. Phys. JETP 70, 322 (1990)].

    ADS  Google Scholar 

  207. L. Liszkay, K. Havancsak, M.-F. Barthe, et al., Mater. Sci. Forum 363, 123 (2001).

    Article  Google Scholar 

  208. M. Levalois, I. Lhermitte-Sebire, P. Marie, et al., Nucl. Instrum. Methods Phys. Res. B 107, 239 (1996).

    Article  ADS  Google Scholar 

  209. I. Lhermitte-Sebire, J. L. Chermant, M. Levalois, et al., Philos. Mag. A 69, 237 (1994).

    Article  ADS  Google Scholar 

  210. K. Yasuda, M. Takeda, H. Masuda, and A. Yoshida, Phys. Status Solidi A 71, 549 (1982).

    Article  ADS  Google Scholar 

  211. D. V. Kratic, M. D. Vlajic, and R. A. Verrall, Key Eng. Mater. 122–124, 387 (1996).

    Article  Google Scholar 

  212. S. J. Zinkle, J. W. Jones, and V. A. Skuratov, Mater. Res. Soc. Symp. Proc. 650, R3.19.1 (2001).

    Google Scholar 

  213. E. Kalinina, G. Kholujanov, G. Onushkin, et al., Mater. Sci. Forum 433–436, 467 (2003).

    Article  Google Scholar 

  214. E. V. Kalinina, G. F. Kholuyanov, G. A. Onushkin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 1223 (2004) [Semiconductors 38, 1187 (2004)].

    Google Scholar 

  215. E. V. Kalinina, V. A. Skuratov, A. A. Sitnikova, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 41, 392 (2007) [Semiconductors 41, 376 (2007)].

    Google Scholar 

  216. W. Primak, L. H. Fuchs, and P. P. Day, Phys. Rev. 103, 1184 (1956).

    Article  ADS  Google Scholar 

  217. M. Heerschap and R. de Coninck, in Semiconductor Counters for Radiations, Ed. by G. L. Smolyan (Gosatomizdat, Moscow, 1962), p. 238 [in Russian].

    Google Scholar 

  218. C. E. Barnes, Appl. Phys. Lett. 20, 86 (1972).

    Article  ADS  MathSciNet  Google Scholar 

  219. I. V. Ryzhikov, I. L. Kasatkin, and E. F. Uvarov, Élektron. Tekh., Ser. 2: Poluprovodn. Prib., No. 4(147), 9 (1981).

    Google Scholar 

  220. V. V. Evstropov and A. M. Strel’chuk, Fiz. Tekh. Poluprovodn. (St. Petersburg) 30, 92 (1996) [Semiconductors 30, 52 (1996)].

    Google Scholar 

  221. A. M. Strel’chuk, V. V. Kozlovski, A. A. Lebedev, and N. Yu. Smirnova, Mater. Sci. Forum 483–485, 1001 (2005).

    Article  Google Scholar 

  222. A. V. Afanas’ev, V. A. Il’in, and A. A. Petrov, Peterb. Zh. Élektron., Nos. 3–4, 12 (2000).

  223. A. Yu. Nikiforov, A. V. Afanas’ev, V. A. Il’in, et al., in Radiation Resistance of Electronic Systems: Stability-2001 (Paims, Moscow, 2001), Vol. 4, p. 145.

    Google Scholar 

  224. A. Yu. Nikiforov, P. A. Ivanov, and V. V. Luchinin, in Radiation Resistance of Electronic Systems: Stability-2002 (Paims, Moscow, 2002), Vol. 5, p. 167.

    Google Scholar 

  225. A. Yu. Nikiforov, E. V. Kalinina, V. V. Luchinin, et al., in Radiation Resistance of Electronic Systems: Stability-2002 (Paims, Moscow, 2002), Vol. 5, p. 169.

    Google Scholar 

  226. E. Kalinina, A. Strel’chuk, A. A. Lebedev, et al., in Proceedings of International Conference on Silicon Carbide and Related Materials, ICSCRM2005 (Pittsburg, USA, 2005).

  227. A. Strel’chuk, E. Kalinina, A. O. Konstantinov, and A. Hallén, Mater. Sci. Forum 483–485, 993 (2005).

    Google Scholar 

  228. A. Strel’chuk, V. V. Kozlovski, N. S. Savkina, et al., in Proceedings of EMRS (Strasburg, 1998).

  229. Y. Tanaka, K. Kojima, K. Takao, et al., Mater. Sci. Forum 483–485, 985 (2005).

    Article  Google Scholar 

  230. M. Wolborski, M. Bakowski, and W. Klamra, Mater. Sci. Forum 457–460, 1487 (2004).

    Google Scholar 

  231. J. M. McGarrity, C. J. Scozzie, J. Blackburn, and W. M. DeLancey, in Proceedings of IEEE Nuclear Science Symposium and Medical Imaging Conference (1995), Record 1, p. 114.

  232. T. Ohshima, K. K. Lee, A. Ohi, et al., Mater. Sci. Forum 389–393, 1093 (2002).

    Google Scholar 

  233. K. K. Lee, T. Ohshima, and H. Itoh, IEEE Trans. Nucl. Sci. 50, 194 (2003).

    Article  ADS  Google Scholar 

  234. J. N. Merrett, J. R. Williams, J. D. Cressler, et al., Mater. Sci. Forum 483–485, 885 (2005).

    Article  Google Scholar 

  235. F. Nava, P. Vanni, G. Verzellesi, et al., Mater. Sci. Forum 353–356, 757 (2001).

    Google Scholar 

  236. A. Lo Giudice, P. Olivero, F. Fizzotti, et al., Mater. Sci. Forum 483–485, 389 (2005).

    Article  Google Scholar 

  237. A. M. Ivanov, A. A. Lebedev, and N. B. Strokan, Fiz. Tekh. Poluprovodn. (St. Petersburg) 40, 1259 (2006) [Semiconductors 40, 1227 (2006)].

    Google Scholar 

  238. F. Nava, E. Vittone, P. Vanni, et al., Nucl. Instrum. Methods Phys. Res. A 505, 645 (2003).

    Article  ADS  Google Scholar 

  239. G. Bertuccio, S. Binetti, S. Caccia, et al., Mater. Sci. Forum 483–485, 1015 (2005).

    Google Scholar 

  240. N. B. Strokan, A. A. Lebedev, A. M. Ivanov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 34, 1443 (2000) [Semiconductors 34, 1386 (2000)].

    Google Scholar 

  241. A. M. Ivanov, N. B. Strokan, D. V. Davydov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 35, 495 (2001) [Semiconductors 35, 481 (2001)].

    Google Scholar 

  242. S. Sciortino, F. Hartjes, S. Lagomarsino, et al., Nucl. Instrum. Methods Phys. Res. A 552, 138 (2005).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    E. V. Kalinina

Authors
  1. E. V. Kalinina
    View author publications

    You can also search for this author in PubMed Google Scholar

Additional information

Original Russian Text © E.V. Kalinina, 2007, published in Fizika i Tekhnika Poluprovodnikov, 2007, Vol. 41, No. 7, pp. 769–805.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Kalinina, E.V. The effect of irradiation on the properties of SiC and devices based on this compound. Semiconductors 41, 745–783 (2007). https://doi.org/10.1134/S1063782607070019

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782607070019

PACS numbers

Search

Navigation