Abstract
Tunneling emission currents of electrons from semiconductors to vacuum (needle-shaped GaAs photodetectors) and to a metal (silicon metal-insulator-semiconductor diodes with a tunneling-transparent insulator layer) are studied in high and ultrahigh electric fields. It is shown that, in semiconductors with the n-type conductivity, the major contribution to the emission current is made by the tunneling emission of electrons from the valence band of the semiconductor, rather than from the conduction band.
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Original Russian Text © V.D. Kalganov, N.V. Mileshkina, E.V. Ostroumova, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 9, pp. 1062–1068.
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Kalganov, V.D., Mileshkina, N.V. & Ostroumova, E.V. Tunneling emission of electrons from semiconductors’ valence bands in high electric fields. Semiconductors 40, 1036–1042 (2006). https://doi.org/10.1134/S1063782606090089
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DOI: https://doi.org/10.1134/S1063782606090089