Abstract
Electroluminescent structures that emit in the visible region of the spectrum and are based on porous silicon (por-Si) formed on the p-Si substrate electrolytically using an internal current source are fabricated. The photoluminescent and electroluminescent properties, as well as the current-and capacitance-voltage characteristics of the structures are studied. Electroluminescence is observed only if the forward bias voltage is applied to the structure; the electroluminescence mechanism is based on the injection and is related to the radiative recombination of electrons and holes in quantum-dimensional Si nanocrystals. The injection of holes is controlled by the condition of their accumulation in the space-charge region of p-Si and by a comparatively low concentration of electronic states at the por-Si/p-Si interface. The charge transport in por-Si is caused by the direct tunneling of charge carriers between the quantum-mechanical levels, which is ensured by an appreciable number of quantum-dimensional Si nanocrystals. The leakage currents are low as a result of a small variance in the sizes of Si nanocrystals and the absence of comparatively large nanocrystals.
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Original Russian Text © A.A. Evtukh, É.B. Kaganovich, E.G. Manoĭlov, N.A. Semeneuko, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 2, pp. 180–184.
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Evtukh, A.A., Kaganovich, É.B., Manoĭlov, É.G. et al. A mechanism of charge transport in electroluminescent structures consisting of porous silicon and single-crystal silicon. Semiconductors 40, 175–179 (2006). https://doi.org/10.1134/S1063782606020126
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DOI: https://doi.org/10.1134/S1063782606020126