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Dependence of energy resolution of a plane-parallel HPGe detector on bias voltage upon registration of low-energy X-rays

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Abstract

In this study, we theoretically analyze the processes in a plane-parallel high-purity germanium (HPGe) detector. The generating function of factorial moments describing the process of registration of low-energy X-rays by the HPGe detector with consideration of capture of charge carriers by traps is obtained. It is demonstrated that the coefficients of expansion of the average signal amplitude and variance in power series over the quantity inversely proportional to the bias voltage of the detector allow one to determine the Fano factor, the product of the charge carrier lifetime and mobility, and other characteristics of the semiconductor material of the detector.

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References

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Authors and Affiliations

  1. National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Kashirskoe sh. 31, Moscow, 115409, Russia

    V. V. Samedov

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  1. V. V. Samedov
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Correspondence to V. V. Samedov.

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Original Russian Text © V.V. Samedov, 2015, published in Yadernaya Fizika i Inzhiniring, 2015, Vol. 6, Nos. 5–6, pp. 284–289.

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Samedov, V.V. Dependence of energy resolution of a plane-parallel HPGe detector on bias voltage upon registration of low-energy X-rays. Phys. Atom. Nuclei 79, 1397–1401 (2016). https://doi.org/10.1134/S1063778816090106

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  • DOI: https://doi.org/10.1134/S1063778816090106

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