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Scattering of an exciton polariton by impurity centers in GaAs

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Abstract

Scattering of an exciton polariton by impurity centers at low temperatures has not been investigated comprehensively in spite of its significant role in processes accompanying Bose–Einstein condensation of an exciton polariton. For studying the peculiarities of the interaction of an exciton polariton with impurity centers, we have studied the integrated absorption of the ground state (n 0 = 1) of the exciton in GaAs in thin (micrometer-thick) wafers with an appreciable optical transmission. Comparative analysis of the transmission in the vicinity of the exciton resonance performed on 15 samples of crystalline GaAs wafers with different concentrations N of impurity has revealed an unexpected regularity. The value of N increases by almost five decimal orders of magnitude, while the normalized spectrally integrated absorption of light exhibits a slight increase, following the power dependence N m on the concentration, where m = 1/6. It has been shown that this dependence indicates the diffusion mechanism of propagation of the exciton polaritons through the bulk of the semiconductor, which is present along with the ballistic propagation of light through the sample.

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Authors and Affiliations

  1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    D. A. Zaitsev & R. P. Seisyan

  2. St. Petersburg State University, St. Petersburg, 198504, Russia

    A. V. Kavokin

  3. University of Southampton, Highfield Southampton, SO171BJ, UK

    A. V. Kavokin

  4. CNR-SPIN, Viale del Politecnico 1, I-00133, Rome, Italy

    A. V. Kavokin

Authors
  1. D. A. Zaitsev
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  2. A. V. Kavokin
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  3. R. P. Seisyan
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Correspondence to D. A. Zaitsev.

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Original Russian Text © D.A. Zaitsev, A.V. Kavokin, R.P. Seisyan, 2017, published in Zhurnal Eksperimental’noi i Teoreticheskoi Fiziki, 2017, Vol. 151, No. 4, pp. 767–775.

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Zaitsev, D.A., Kavokin, A.V. & Seisyan, R.P. Scattering of an exciton polariton by impurity centers in GaAs. J. Exp. Theor. Phys. 124, 657–664 (2017). https://doi.org/10.1134/S1063776117030098

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  • DOI: https://doi.org/10.1134/S1063776117030098

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