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Types of defect ordering in undoped and lanthanum-doped Bi2201 single crystals

  • Order, Disorder, and Phase Transitions in Condensed Systems
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Abstract

Undoped and lanthanum-doped Bi2201 single crystals having a perfect average structure have been comparatively studied by x-ray diffraction. The undoped Bi2201 single crystals exhibit very narrow satellite reflections; their half-width is five to six times smaller than that of Bi2212 single crystals grown by the same technique. This narrowness indicates three-dimensional defect ordering in the former crystals. The lanthanumdoped Bi2201 single crystals with x = 0.7 and T c = 8–10 K exhibit very broad satellite reflections consisting of two systems (modulations) misoriented with respect to each other. The modulation-vector components of these two modulations are found to be q 1 = 0.237b* + 0.277c* and q 2 = 0.238b* + 0.037c*. The single crystals having a perfect average structure and a homogeneous average distribution of doping lanthanum consist of 70-to 80-Å-thick layers that alternate along the c axis and have two different types of modulated superlattice. The crystals having a less perfect average structure also consist of alternating layers, but they have different lanthanum concentrations. The low value of T c in the undoped Bi2201 single crystals (9.5 K) correlates with three-dimensional defect ordering in them, and an increase in T c to 33 K upon lanthanum doping can be related to a thin-layer structure of these crystals and to partial substitution of lanthanum for the bismuth positions.

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Authors and Affiliations

  1. Lebedev Physical Institute, Russian Academy of Sciences, Leninskiĭ pr. 53, Moscow, 119991, Russia

    V. P. Martovitsky

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  1. V. P. Martovitsky
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Original Russian Text © V.P. Martovitsky, 2006, published in Zhurnal Éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2006, Vol. 129, No. 6, pp. 1087–1096.

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Martovitsky, V.P. Types of defect ordering in undoped and lanthanum-doped Bi2201 single crystals. J. Exp. Theor. Phys. 102, 958–965 (2006). https://doi.org/10.1134/S1063776106060094

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  • DOI: https://doi.org/10.1134/S1063776106060094

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