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Parametrization of a Microwave and the Noise Model of a Metamorphic 0.15 µm MHET InAlAs/InGaAs Transistor

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Abstract

AlGaAs MHEMT transistors are studied in the microwave frequency range with a gate length of 0.15 μm. It is found that the discrepancy between the experimental and theoretically calculated, within the model, S-parameters does not exceed 0.5% in the frequency range from 1 to 30 GHz. The static characteristics of the device are satisfactorily described by the indicated model in the voltage range of the runoff up to 2.5 V. For the analysis of the noise characteristics, the Fukui model is used. It is found that the influence of the parasitic drain capacitance and the values of the drain and source inductances do not significantly affect the noise characteristics of the transistor, and an increase in the parasitic capacitance and a decrease in the parasitic gate inductance can lead to a significant reduction in the high-frequency noise figure.

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ACKNOWLEDGMENTS

This study was supported by the Competitiveness Enhancement Program of the National Research Nuclear University (NRNU) MEPhI with the use of the equipment of the NRNU MEPhI Shared Use Center “Heterostructure Microwave Electronics and the Physics of Wide-Gap Semiconductors.”

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  1. National Research Nuclear University MEPhI, 115409, Moscow, Russia

    A. A. Gorelov, V. V. Lokotko, N. I. Kargin, I. S. Vasilievsky, K. S. Grishakov & R. V. Ryzhuk

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  1. A. A. Gorelov
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  2. V. V. Lokotko
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  3. N. I. Kargin
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  4. I. S. Vasilievsky
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  5. K. S. Grishakov
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  6. R. V. Ryzhuk
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Correspondence to R. V. Ryzhuk.

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Gorelov, A.A., Lokotko, V.V., Kargin, N.I. et al. Parametrization of a Microwave and the Noise Model of a Metamorphic 0.15 µm MHET InAlAs/InGaAs Transistor. Russ Microelectron 50, 170–177 (2021). https://doi.org/10.1134/S1063739721030057

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  • DOI: https://doi.org/10.1134/S1063739721030057

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