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X-ray electron probe microanalysis of the reaction zone of thermally stimulated heterovalent anion substitution in the Ga III2 Se VI3 -GaAs solid-phase system

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Abstract

X-ray electron probe microanalysis (EPMA) was used to study the concentration profiles of the main reaction components in the Ga2Se3-GaAs heterojunction obtained as a result of thermally stimulated heterovalent anion substitution. It has been found that the quasi-equilibrium and quasi-steady diffusion modes for delivery of chalcogen to the reaction zone are different with respect to the kinetics of the A III2 C VI3 layer growth. Independent of this, the concentration profiles of the reaction elements are self-organized with time, which allows heterostuctures with a sharp interphase boundary to be reproduced.

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Authors and Affiliations

  1. Voronezh State Technological Academy, pr. Revolutsii, 19, Voronezh, 394036, Russia

    A. V. Budanov, Ya. A. Boldyreva, V. D. Strygin & E. A. Tatokhin

  2. Scientific Research Institute of Electronic Engineering, Leninskii pr., 119-a, Voronezh, 394042, Russia

    B. L. Agapov

Authors
  1. A. V. Budanov
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  2. B. L. Agapov
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  3. Ya. A. Boldyreva
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  4. V. D. Strygin
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  5. E. A. Tatokhin
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Correspondence to A. V. Budanov.

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Original Russian Text © A.V. Budanov, B.L. Agapov, Ya.A. Boldyreva, V.D. Strygin, E.A. Tatokhin, 2012, published in Poverkhnost’. Rentgenovskie, Sinkhrotronnye i Neitronnye Issledovaniya, 2012, No. 1, pp. 21–27.

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Budanov, A.V., Agapov, B.L., Boldyreva, Y.A. et al. X-ray electron probe microanalysis of the reaction zone of thermally stimulated heterovalent anion substitution in the Ga III2 Se VI3 -GaAs solid-phase system. J. Surf. Investig. 6, 19–24 (2012). https://doi.org/10.1134/S1027451012010053

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  • DOI: https://doi.org/10.1134/S1027451012010053

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