Abstract
Thin SnO2<Sb> films grown by pulsed laser deposition have been characterized by X-ray diffraction, optical spectroscopy, and scanning electron microscopy. The carrier mobility and concentration in the films have been determined as functions of target composition (0–8 at % Sb) using Hall effect measurements, and the resistivity of the films has been measured by a four-probe technique. The lowest resistivity (ρ = 2 × 10−3 Ω cm) and the highest transmission (≃ 85%) of the films in the spectral range 400-800 nm have been obtained at a target composition Sb/(Sn + Sb) = 2 at %. The observed variation in the resistivity of the films is determined by changes in carrier concentration to a greater extent than by changes in carrier mobility. X-ray photoelectron spectroscopy results demonstrate that the predominant charge state of the antimony in the films is Sb5+.
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Original Russian Text © I.A. Petukhov, L.S. Parshina, D.A. Zuev, A.A. Lotin, O.A. Novodvorsky, O.D. Khramova, A.N. Shatokhin, F.N. Putilin, M.N. Rumyantseva, V.F. Kozlovskii, K.I. Maslakov, V.K. Ivanov, A.M. Gaskov, 2013, published in Neorganicheskie Materialy, 2013, Vol. 49, No. 11, pp. 1211–1215.
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Petukhov, I.A., Parshina, L.S., Zuev, D.A. et al. Transport properties of thin SnO2〈Sb〉 films grown by pulsed laser deposition. Inorg Mater 49, 1123–1126 (2013). https://doi.org/10.1134/S0020168513100099
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DOI: https://doi.org/10.1134/S0020168513100099