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Numerical modeling of the electrical properties of Si-SiO2-VO2 structures

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Abstract

We have numerically modeled the ac current passage through a Si-SiO2-VO2 structure, which is known to exhibit switching with an S-like characteristic due to a metal-semiconductor phase transition in vanadium dioxide. It is shown that the dynamics of switching at high frequencies (105–109 Hz) can be effectively controlled, which makes such structures promising elements for use in high-frequency microelectronics as analogs of thyristors and photothyristors.

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Authors and Affiliations

  1. Petrozavodsk State University, Petrozavodsk, Karelia, Russia

    N. A. Kuldin, A. A. Velichko, A. L. Pergament, G. B. Stefanovich & P. P. Boriskov

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  1. N. A. Kuldin
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  2. A. A. Velichko
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  3. A. L. Pergament
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  4. G. B. Stefanovich
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  5. P. P. Boriskov
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \) Fiziki, Vol. 31, No. 12, 2005, pp. 63–70.

Original Russian Text Copyright © 2005 by Kuldin, Velichko, Pergament, Stefanovich, Boriskov.

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Kuldin, N.A., Velichko, A.A., Pergament, A.L. et al. Numerical modeling of the electrical properties of Si-SiO2-VO2 structures. Tech. Phys. Lett. 31, 520–523 (2005). https://doi.org/10.1134/1.1969787

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  • DOI: https://doi.org/10.1134/1.1969787

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