Abstract
The electroluminescence (EL) of p +-Si/n-Si: Er/n +-Si light-emitting diode structures in which a thin lightly doped n-Si: Er layer (N D ∼ 1016 cm−3) is sandwiched between heavily doped silicon layers is studied. It is shown that the Er3+ ion EL intensity reaches a maximum in structures operating in a regime of mixed-type breakdown in the space-charge region. The dark-region width is determined (d dark ∼ 0.015–0.020 μm) within which the electrons attain an energy sufficient to excite Er3+ ions.
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Translated from Fizika Tverdogo Tela, Vol. 47, No. 1, 2005, pp. 120–123.
Original Russian Text Copyright © 2005 by Shmagin, Remizov, Obolenski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Kryzhkov, Drozdov, Krasil’nik.
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Shmagin, V.B., Remizov, D.Y., Obolenskii, S.V. et al. Er3+ ion electroluminescence of p +-Si/n-Si: Er/n +-Si diode structure under breakdown conditions. Phys. Solid State 47, 125–128 (2005). https://doi.org/10.1134/1.1853461
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DOI: https://doi.org/10.1134/1.1853461