Abstract
The technology and properties of light-emitting structures based on silicon layers doped by erbium during epitaxial MBE growth are studied. The epitaxial layer forming on substrates prepared from Czochralski-grown silicon becomes doped by oxygen and carbon impurities in the process. This permits simplification of the Si: Er layer doping by luminescence-activating impurities, thus eliminating the need to make a special capillary for introducing them into the growth chamber from the vapor phase. The photoluminescence spectra of all the structures studied at 78 K are dominated by an Er-containing center whose emission line peaks at 1.542 μm. The intensity of this line measured as a function of the substrate and erbium dopant source temperatures over the ranges 400–700°C and 740–800°C, respectively, exhibits maxima. The edge luminescence and the P line observed in the PL spectra are excited predominantly in the substrate. The erbium atom concentration in the epitaxial layers grown at a substrate temperature of 600°C was studied by Rutherford proton backscattering and exhibits an exponential dependence on the erbium source temperature with an activation energy of ∼2.2 eV.
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Translated from Fizika Tverdogo Tela, Vol. 47, No. 1, 2005, pp. 108–111.
Original Russian Text Copyright © 2005 by Sobolev, Denisov, Emel’yanov, Shek, Ber, Kovarski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Sakharov, Serenkov, Ustinov, Cirlin, Kotereva.
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Sobolev, N.A., Denisov, D.V., Emel’yanov, A.M. et al. MBE-grown Si: Er light-emitting structures: Effect of epitaxial growth conditions on impurity concentration and photoluminescence. Phys. Solid State 47, 113–116 (2005). https://doi.org/10.1134/1.1853458
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DOI: https://doi.org/10.1134/1.1853458