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Behavior of graded-gap detectors of ionizing radiation under irradiation with alpha particles

  • Physics of Semiconductor Devices
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Abstract

The effect of irradiation with α particles on the current and optical responses of graded-gap AlxGa1−x As/GaAs detectors of α particles and X-ray photons is studied. It is established that a reduction in both the current and optical response is caused by an increase in the rate of nonradiative recombination as the dose of α-particle radiation increases.

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Authors and Affiliations

  1. Institute of Semiconductor Physics, Vilnius, 2600, Lithuania

    L. Dapkus, K. Pozela, J. Pozela, A. Cilėnas, V. Jucienė & V. Jasutis

Authors
  1. L. Dapkus
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  2. K. Pozela
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  3. J. Pozela
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  4. A. Cilėnas
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  5. V. Jucienė
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  6. V. Jasutis
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 38, No. 9, 2004, pp. 1147–1150.

Original Russian Text Copyright © 2004 by Dapkus, K. Po\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{z} \)ela, J. Po\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{z} \)ela, \(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{C} \)ilėnas, Jucienė, Jasutis.

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Dapkus, L., Pozela, K., Pozela, J. et al. Behavior of graded-gap detectors of ionizing radiation under irradiation with alpha particles. Semiconductors 38, 1111–1114 (2004). https://doi.org/10.1134/1.1797495

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  • DOI: https://doi.org/10.1134/1.1797495

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