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Negative luminescence in p-InAsSbP/n-InAs diodes

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

Negative luminescence (NL) at λmax=3.8 µm from reverse-biased p-InAsSbP/n-InAs diode heterostructures has been studied at temperatures of 70–180°C. The NL power increases with temperature and exceeds the power of direct-bias electroluminescence at temperatures over 110°C. An NL power of 5 mW/cm2, efficiency of 60%, and a conversion efficiency of 25 mW/(A cm2) have been obtained at 160°C.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’ & G. N. Talalakin

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  1. M. Aidaraliev
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  2. N. V. Zotova
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  3. S. A. Karandashev
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  4. B. A. Matveev
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  5. M. A. Remennyi
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  6. N. M. Stus’
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  7. G. N. Talalakin
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__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 35, No. 3, 2001, pp. 335–338.

Original Russian Text Copyright © 2001 by A\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \)daraliev, Zotova, Karandashev, Matveev, Remenny\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \), Stus’, Talalakin.

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Aidaraliev, M., Zotova, N.V., Karandashev, S.A. et al. Negative luminescence in p-InAsSbP/n-InAs diodes. Semiconductors 35, 321–324 (2001). https://doi.org/10.1134/1.1356155

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  • DOI: https://doi.org/10.1134/1.1356155

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