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Photoluminescence of porous silicon layers formed in ion-implanted silicon wafers

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Abstract

Implantation of the B+ and N+ ions or a B+ + N+ combination into silicon substrates affects the photoluminescence properties of porous silicon (por-Si) layers prepared on the ion-modified wafers. The postimplantation anneals lead to significant changes in the por-Si emission bands. Models explaining the observed phenomena are suggested.

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Authors and Affiliations

  1. Institute of Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine

    Yu. P. Piryatinskii

  2. Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine

    N. I. Klyui & A. G. Rozhin

Authors
  1. Yu. P. Piryatinskii
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  2. N. I. Klyui
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  3. A. G. Rozhin
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Translated from Pis’ma v Zhurnal Tekhnichesko\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\) Fiziki, Vol. 26, No. 21, 2000, pp. 20–25.

Original Russian Text Copyright © 2000 by Piryatinski\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Klyu\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}\), Rozhin.

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Piryatinskii, Y.P., Klyui, N.I. & Rozhin, A.G. Photoluminescence of porous silicon layers formed in ion-implanted silicon wafers. Tech. Phys. Lett. 26, 944–946 (2000). https://doi.org/10.1134/1.1329678

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  • DOI: https://doi.org/10.1134/1.1329678

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