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Influence of the doping profile on the collector junction breakdown voltages in planar n-p-n transistors

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Abstract

Planar n-p-n transistors are fabricated with various profiles of the base impurity distribution, and their electrical parameters are investigated. An equation for calculating the breakdown voltage of the collector-base junction is proposed on the basis of an experimental data analysis. It is shown that the use of a planar p-n junction raises the collector junction breakdown voltages of planar n-p-n transistors.

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Authors and Affiliations

  1. Kherson Industrial Institute, 325008, Kherson, Ukraine

    N. A. Samoilov, A. N. Frolov & S. V. Shutov

Authors
  1. N. A. Samoilov
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  2. A. N. Frolov
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  3. S. V. Shutov
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Zh. Tekh. Fiz. 68, 136–137 (October 1998)

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Samoilov, N.A., Frolov, A.N. & Shutov, S.V. Influence of the doping profile on the collector junction breakdown voltages in planar n-p-n transistors. Tech. Phys. 43, 1262–1263 (1998). https://doi.org/10.1134/1.1259179

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  • DOI: https://doi.org/10.1134/1.1259179

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