Abstract
A study is made of the electrical, optical, and structural properties of Si:Er layers produced by sublimation molecular-beam epitaxy. The Er and O contents in the layers, grown at 400–600°C, were as high as 5×1018 and 4×1019 cm−3, respectively. The electron concentration at 300 K was ∼10% of the total erbium concentration and the electron mobility was as high as 550 cm2/(V·s). Intense photoluminescence at 1.537 µm was observed from all the structures up to 100–140 K. The structure of the optically active centers associated with Er depended on the conditions under which the layers were grown.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Y.-H. Xie, E. A. Fitzgerald, and Y. J. Mii, J. Appl. Phys. 70, 3223 (1991).
J. Stimmer, A. Reittinger, J. F. Ntzel, G. Abstreiter, H. Holzbrecher, and Ch. Buchal, Appl. Phys. Lett. 68, 3290 (1996).
R. Serna, Jung H. Shin, M. Lohmeier, E. Vlieg, A. Polman, and P. F. A. Alkemade, J. Appl. Phys. 79, 2658 (1996).
W.-X. Ni, K. B. Joelsson, C.-X. Du, I. A. Buyanova, G. Pozina, W. M. Chen, G. V. Hansson, B. Monemar, J. Gardenas, and B. G. Svensson, Appl. Phys. Lett. 70, 3383 (1997).
V. P. Kuznetsov, A. Yu. Andreev, O. A. Kyznetsov, L. E. Nikolaeva, T. M. Zotova, and N. V. Gudkova, Phys. Status Solidi A 127, 371 (1991).
V. P. Kuznetsov, A. Yu. Andreev, and N. A. Alyabina, Élektronnaya promyshlennost’ 9, 57 (1990).
N. G. Kalugin, V. P. Kuznetsov, A. Yu. Andreev, M. V. Stepikhova, R. A. Rubtsova, and Z. F. Krasil’nik, in Proceedings of the International Symposium “Nanostructures: Physics and Technology”, (St. Petersburg, 1997), p. 310.
T. N. Sergievskaya, V. P. Kuznetsov, V. G. Vasil’ev, and V. A. Tolomasov, Élektron. tekhn. Materialy, vyp. 10, 58 (1980).
D. E. Wortman, C. A. Morrison, and J. L. Bradshaw, J. Appl. Phys. 82, 2580 (1997).
H. Ellmer, W. Fischer, and A. Klose, D. Semrad, Rev. Sci. Instrum. 67, 1794 (1996).
L. Palmetshofer, Yu. Suprun-Belevich, and M. Stepikhova, Nucl. Instrum. Meth. B 127/128, 479 (1997).
H. Przybylinska, W. Jantsch, Yu. Suprun-Belevitch, M. Stepikhova, L. Palmetshofer, G. Hendorfer, A. Kozanecki, R. J. Wilson, and B. J. Sealy, Phys. Rev. B 54, 2532 (1996).
S. Coffa, G. Franzo, F. Priolo, A. Polman, and R. Serna, Phys. Rev. B 49, 16 313 (1994).
H. Efeoglu, J. H. Evans, T. E. Jackman, B. Hamilton, D. C. Houghton, J. M. Langer, A. R. Peaker, D. Perovic, I. Poole, N. Ravel, P. Hemment, and C. W. Chan, Semicond. Sci. Technol. 8, 236 (1993).
J. L. Benton, J. Michel, L. C. Kimerling, D. C. Jacobson, Y.-H. Xie, D. J. Eaglesham, E. A. Fitzgerald, and J. M. Poate, J. Appl. Phys. 70, 2667 (1991).
Author information
Authors and Affiliations
Additional information
Fiz. Tekh. Poluprovodn. 33, 156–160 (February 1999)
Rights and permissions
About this article
Cite this article
Andreev, A.Y., Andreev, B.A., Drozdov, M.N. et al. Optically active layers of silicon doped with erbium during sublimation molecular-beam epitaxy. Semiconductors 33, 131–134 (1999). https://doi.org/10.1134/1.1187658
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1134/1.1187658