Abstract
Molecular-beam epitaxy at 200 °C is used to grow an InAs/GaAs superlattice containing 30 InAs delta-layers with a nominal thickness of 1 monolayer, separated by GaAs layers of thickness 30 nm. It is found that the excess arsenic concentration in such a superlattice is 0.9×1020 cm−3. Annealing the samples at 500 and 600 °C for 15 min leads to precipitation of the excess arsenic mainly into the InAs delta-layers. As a result, a superlattice of two-dimensional sheets of nanoscale arsenic clusters, which coincides with the superlattice of the InAs delta-layers in the GaAs matrix, is obtained.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
F. W. Smith, A. R. Calawa, C. L. Chen, M. J. Mantra, and L. J. Mahoney, Electron. Dev. Lett. 9, 77 (1988).
M. Kaminska, Z. Liliental-Weber, E. R. Weber, T. George, J. B. Kortright, F. W. Smith, B. Y. Tsaur, and A. R. Calawa, Appl. Phys. Lett. 54, 1831 (1989).
M. R. Melloch, K. Mahalingam, N. Otsuka, J. M. Woodall, and A. C. Warren, J. Cryst. Growth 111, 39 (1991).
N. A. Bert, A. I. Veinger, M. D. Vilisova, S. I. Goloshchapov, I. V. Ivonin, S. V. Kozyrev, A. E. Kunitsyn, L. G. Lavrent’eva, D. I. Lubyshev, V. V. Preobrazhenskii, B. R. Semyagin, V. V. Tret’yakov, V. V. Chaldyshev, and M. P. Yakubenya, Fiz. Tverd. Tela (St. Petersburg) 35, 2609 (1993) [Phys. Solid State 35, 1289 (1993)].
J. K. Luo, H. Thomas, D. V. Morgan, D. Westwood, and R. H. Williams, Semicond. Sci. Technol. 9, 2199 (1994).
T. M. Cheng, C. V. Chang, A. Chin, M. F. Huang, and J. H. Huang, Appl. Phys. Lett. 64, 2517 (1994).
N. A. Bert, V. V. Chaldyshev, D. I. Lubyshev, V. V. Preobrazhenskii, and B. R. Semyagin, Fiz. Tekh. Poluprovodn. 29, 2242 (1995) [Semiconductors 29, 1170 (1995)].
N. A. Bert, V. V. Chaldyshev, N. N. Faleev, A. E. Kunitsyn, D. I. Lubyshev, V. V. Preobrazhenskii, B. R. Semyagin, and V. V. Tret’yakov, Semicond. Sci. Technol. 12, 51 (1997).
X. Liu, A. Prasad, J. Nishio, E. R. Weber, Z. Liliental-Weber, and W. Walukiewicz, Appl. Phys. Lett. 67, 279 (1995).
N. A. Bert, V. V. Chaldyshev, A. E. Kunitsyn, Yu. G. Musihin, N. N. Faleev, V. V. Tret’yakov, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin, Appl. Phys. Lett. 70, 3146 (1997).
V. V. Chaldyshev, A. E. Kunitsyn, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, V. V. Tret’yakov, and N. N. Faleev, Fiz. Tekh. Poluprovodn. 32, 778 (1998) [Semiconductors 32, 692 (1998)].
N. A. Bert, Yu. G. Musikhin, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, A. A. Suvorova, V. V. Chaldyshev, N. N. Faleev, and P. Werner, Fiz. Tekh. Poluprovodn. 32, 769 (1998) [Semiconductors 32, 683 (1998)].
N. N. Faleev, V. V. Chaldyshev, A. E. Kunitsyn, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, and V. V. Tret’yakov, Fiz. Tekh. Poluprovodn. 32, 24 (1998) [Semiconductors 32, 19 (1998)].
M. Martin, Appl. Phys. Lett. 39, 747 (1981).
V. V. Chaldyshev, N. A. Bert, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin, Mater. Sci. Eng., A 238, 148 (1997).
I. M. Lifshitz and V. V. Slezov, Zh. Éksp. Teor. Fiz. 35, 479 (1958) [Sov. Phys. JETP 8, 331 (1959)].
Z. Liliental-Weber, A. Claverie, J. Washburn, F. Smith, and R. Calawa, Appl. Phys. A 53, 141 (1991).
N. A. Bert and V. V. Chaldyshev, Fiz. Tekh. Poluprovodn. 30, 1889 (1996) [Semiconductors 30, 988 (1996)].
Author information
Authors and Affiliations
Additional information
Fiz. Tekh. Poluprovodn. 32, 1161–1164 (October 1998)
Rights and permissions
About this article
Cite this article
Chaldyshev, V.V., Preobrazhenskii, V.V., Putyato, M.A. et al. Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy. Semiconductors 32, 1036–1039 (1998). https://doi.org/10.1134/1.1187561
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1134/1.1187561