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Linear coefficients of photoelasticity in multilayer quantum well structures having a sloping bottom in exciton resonance regions

  • Low-Dimensional Systems and Surface Physics
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Abstract

An analytic expression is obtained for the linear coefficients of photoelasticity in multilayer quantum-well structures having a sloping bottom in the region of the fundamental exciton resonance. The coefficients of photoelasticity are calculated for a GaAs/Al0.28Ga0.72As superlattice at the long-wavelength edge of the exciton ground-state resonance. It is shown that these coefficients for multilayer quantum-well structures with the sloping bottom which arises in a varizone quantum-well, are larger, and for those with a bottom slope determined by a constant electric field applied to the multilayer quantum-well structure, are lower than the same quantities for a superlattice with a rectangular quantum-well. The magnitude of the linear contribution of the piezoelectric field stimulated by the slope of the bottom of the quantum-well to the photoelasticity coefficient is calculated for piezoelectric superlattices and this is compared with the contribution introduced by the straining potential.

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Authors and Affiliations

  1. Institute of Radio Technology and Electronics, Russian Academy of Sciences, 141120, Fryazino, Moscow Region, Moscow

    R. A. Ayukhanov & G. N. Shkerdin

Authors
  1. R. A. Ayukhanov
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  2. G. N. Shkerdin
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Fiz. Tverd. Tela (St. Petersburg) 40, 1740–1744 (September 1998)

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Ayukhanov, R.A., Shkerdin, G.N. Linear coefficients of photoelasticity in multilayer quantum well structures having a sloping bottom in exciton resonance regions. Phys. Solid State 40, 1582–1586 (1998). https://doi.org/10.1134/1.1130605

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  • DOI: https://doi.org/10.1134/1.1130605

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