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Two-photon confocal microscopy in the study of the volume characteristics of semiconductors

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Abstract

Zn–Se crystals are used to analyze prospects for application of two-photon confocal microscopy in the study of plane and volume interband and impurity luminescence in semiconductors. Such maps can be formed with a depth step and planar spatial resolution of several micrometers at distances of up to 1 mm from the surface. The method is used to detect luminescence-active inhomogeneities in crystals and study their structure and luminescence characteristics. Prospects for the application of the two-photon confocal microscopy in the study of direct-band-semiconductors and materials of the fourth group are discussed.

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Authors and Affiliations

  1. Prokhorov General Physics Institute, Russian Academy of Sciences, ul. Vavilova 38, Moscow, 119991, Russia

    V. P. Kalinushkin & O. V. Uvarov

Authors
  1. V. P. Kalinushkin
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  2. O. V. Uvarov
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Correspondence to V. P. Kalinushkin.

Additional information

Original Russian Text © V.P. Kalinushkin, O.V. Uvarov, 2016, published in Zhurnal Tekhnicheskoi Fiziki, 2016, Vol. 86, No. 12, pp. 119–123.

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Kalinushkin, V.P., Uvarov, O.V. Two-photon confocal microscopy in the study of the volume characteristics of semiconductors. Tech. Phys. 61, 1876–1879 (2016). https://doi.org/10.1134/S1063784216120203

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  • DOI: https://doi.org/10.1134/S1063784216120203

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