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InAs(1 – y)Sby/InAsSbP Narrow-Gap Heterostructures (y = 0.09–0.16) Grown by Metalorganic Vapor Phase Epitaxy for the Spectral Range of 4–6 μm

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Abstract

Asymmetric n-InAs/InAs(1 – y)Sby/p-InAsSbP heterostructures with a narrow-gap active layer and a composition range y = 0.09–0.16 were grown by vapor phase epitaxy from metalorganic compounds. Room-temperature electroluminescence was observed at a wavelength of up to λ = 5.1 μm at a spectral maximum. The study of low-temperature electroluminescence spectra provided the possibility to establish the existence of two radiative recombination channels caused by the nature of the InAsSb/InAsSbP heterointerface. The effect produced by the chemistry of the active layer on the composition of the grown barrier layer and the formation of the InAsSb/InAsSbP heterojunction with an increase in the antimony content in the InAsSb solid solution was demonstrated.

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Authors and Affiliations

  1. Ioffe Institute, 194021, St. Petersburg, Russia

    V. V. Romanov, E. V. Ivanov & K. D. Moiseev

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  1. V. V. Romanov
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  2. E. V. Ivanov
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  3. K. D. Moiseev
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Correspondence to K. D. Moiseev.

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Translated by E. Glushachenkova

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Romanov, V.V., Ivanov, E.V. & Moiseev, K.D. InAs(1 – y)Sby/InAsSbP Narrow-Gap Heterostructures (y = 0.09–0.16) Grown by Metalorganic Vapor Phase Epitaxy for the Spectral Range of 4–6 μm. Phys. Solid State 61, 1699–1706 (2019). https://doi.org/10.1134/S1063783419100305

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