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Optical properties of bulk gallium nitride single crystals grown by chloride–hydride vapor-phase epitaxy

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Abstract

A gallium nitride crystal 5 mm in thickness was grown by chloride–hydride vapor-phase epitaxy on a sapphire substrate, from which the crystal separated during cooling. At an early stage, a three-dimensional growth mode was implemented, followed by a switch to a two-dimensional mode. Spectra of exciton reflection, exciton luminescence, and Raman scattering are studied in several regions characteristic of the sample. Analysis of these spectra and comparison with previously obtained data for thin epitaxial GaN layers with a wide range of silicon doping enabled conclusions about the quality of the crystal lattice in these characteristic regions.

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Authors and Affiliations

  1. St. Petersburg State University, St. Petersburg, 199034, Russia

    V. F. Agyekyan, E. V. Borisov, A. Yu. Serov & N. G. Filosofov

Authors
  1. V. F. Agyekyan
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  2. E. V. Borisov
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  3. A. Yu. Serov
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  4. N. G. Filosofov
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Corresponding author

Correspondence to V. F. Agyekyan.

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Original Russian Text © V.F. Agyekyan, E.V. Borisov, A.Yu. Serov, N.G. Filosofov, 2017, published in Fizika Tverdogo Tela, 2017, Vol. 59, No. 12, pp. 2392–2395.

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Agyekyan, V.F., Borisov, E.V., Serov, A.Y. et al. Optical properties of bulk gallium nitride single crystals grown by chloride–hydride vapor-phase epitaxy. Phys. Solid State 59, 2418–2422 (2017). https://doi.org/10.1134/S1063783417120022

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  • DOI: https://doi.org/10.1134/S1063783417120022

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