Skip to main content
SpringerLink
Log in

On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures

  • SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

The photoluminescence of strained InGaAlAs/InGaAs/InP heterostructures with an active region consisting of nine In0.74Ga0.26As quantum wells and δ-doped In0.53Al0.20Ga0.27As barrier layers grown by molecular beam epitaxy on an InP(100) substrate is investigated. Analysis of the photoluminescence spectra demonstrates that p-type doping leads to an increase in the photoluminescence efficiency at low excitation levels in comparison to a heterostructure with undoped barriers, and increasing the level of barrier doping to (1–2) × 1012 cm–2 results in the suppression of nonradiative recombination.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

REFERENCES

  1. R. Michalzik, VCSELs: Fundamentals, Technology and Applications of Vertical-Cavity Surface-Emitting Lasers (Springer, London, 2013).

    Book  Google Scholar 

  2. S. Spiga, A. Andrejew, G. Boehm, and M.-C. Amann, in Proceedings of the 18th International Conference Transparent Optical Networks, Trento, Italy, 2016, p. 1.

  3. A. V. Babichev, A. S. Kurochkin, E. S. Kolodeznyi, A. G. Gladyshev, I. I. Novikov, L. Y. Karachinsky, and A. Y. Egorov, Mater. Phys. Mech. 24, 284 (2015).

    Google Scholar 

  4. I. I. Novikov, A. V. Babichev, E. S. Kolodeznyi, A. S. Kurochkin, A. G. Gladyshev, V. N. Nevedomsky, S. A. Blokhin, A. A. Blokhin, and A. M. Nadtochiy, Mater. Phys. Mech. 29, 76 (2016).

    Google Scholar 

  5. K. J. Vahala and C. E. Zah, Appl. Phys. Lett. 52, 1945 (1988).

    Article  ADS  Google Scholar 

  6. K. Uomi, Jpn. J. Appl. Phys. 29, 81 (1990).

    Article  ADS  Google Scholar 

  7. K. Uomi, T. Mishima, and N. Chinone, Jpn. J. Appl. Phys. 29, 88 (1990).

    Article  ADS  Google Scholar 

  8. G. B. Galiev, I. S. Vasil’evskii, E. A. Klimov, V. G. Mokerov, and A. A. Cherechukin, Semiconductors 40, 1445 (2006).

    Article  ADS  Google Scholar 

  9. K. R. Poguntke and A. R. Adams, Electron. Lett. 28, 41 (1992).

    Article  Google Scholar 

  10. K. Mukai, Y. Nakata, K. Otsubo, M. Sugawara, N. Yokoyama, and H. Ishikawa, IEEE J. Quantum. Electron. 36, 472 (2000).

    Article  ADS  Google Scholar 

  11. B. L. Gel’mont and G. G. Zegrya, Sov. Phys. Semicond. 25, 1216 (1991).

    Google Scholar 

  12. M. I. Dyakonov and V. Y. Kachorovskii, Phys. Rev. B 49, 17130 (1994).

    Article  ADS  Google Scholar 

Download references

ACKNOWLEDGMENTS

This study was supported by the Ministry of Education and Science of the Russian Federation in the framework of the Federal Targeted Program “Research and Development in Priority Areas for the Russian Science and Technology Complex 2014–2020” (agreement no. 14.578.21.0253, unique identifier RFMEFI57817X0253).

Author information

Authors and Affiliations

  1. ITMO University, 197101, St. Petersburg, Russia

    E. S. Kolodeznyi, A. S. Kurochkin, S. S. Rochas, A. V. Babichev, I. I. Novikov, A. G. Gladyshev, A. V. Savelyev & A. Yu. Egorov

  2. OOO Connector Optics, 194292, St. Petersburg, Russia

    L. Ya. Karachinsky & D. V. Denisov

  3. St. Petersburg National Research Academic University, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    A. V. Savelyev

  4. St. Petersburg State Electrotechnical University “LETI”, 197376, St. Petersburg, Russia

    D. V. Denisov

Authors
  1. E. S. Kolodeznyi
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. S. Kurochkin
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. S. S. Rochas
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. A. V. Babichev
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. I. I. Novikov
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. A. G. Gladyshev
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. L. Ya. Karachinsky
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. A. V. Savelyev
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. A. Yu. Egorov
    View author publications

    You can also search for this author in PubMed Google Scholar

  10. D. V. Denisov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to A. Yu. Egorov.

Additional information

Translated by M. Skorikov

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Kolodeznyi, E.S., Kurochkin, A.S., Rochas, S.S. et al. On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures. Semiconductors 52, 1156–1159 (2018). https://doi.org/10.1134/S1063782618090075

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782618090075

Keywords

Search

Navigation