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The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination

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Abstract

The dependences of the longitudinal and Hall resistances on a magnetic field in n-InGaAs/GaAs heterostructures with a single and double quantum wells after infrared illumination are measured in the range of magnetic fields В = 0–16 T and temperatures T = 0.05–4.2 K. Analysis of the experimental results was carried out on a base of two-parameter scaling hypothesis for the integer quantum Hall effect. The value of the second (irrelevant) critical exponent of the theory of two-parameter scaling was estimated.

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Authors and Affiliations

  1. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, Yekaterinburg, 620990, Russia

    Yu. G. Arapov, S. V. Gudina, A. S. Klepikova, V. N. Neverov, G. I. Harus, N. G. Shelushinina & M. V. Yakunin

  2. Ural Federal University, Yekaterinburg, 620002, Russia

    M. V. Yakunin

Authors
  1. Yu. G. Arapov
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  2. S. V. Gudina
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  3. A. S. Klepikova
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  4. V. N. Neverov
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  5. G. I. Harus
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  6. N. G. Shelushinina
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  7. M. V. Yakunin
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Correspondence to A. S. Klepikova.

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Arapov, Y.G., Gudina, S.V., Klepikova, A.S. et al. The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination. Semiconductors 51, 272–278 (2017). https://doi.org/10.1134/S1063782617020026

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  • DOI: https://doi.org/10.1134/S1063782617020026

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