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Lattice-matched GaInPAsSb/InAs structures for devices of infrared optoelectronics

  • Physics of Semiconductor Devices
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Abstract

It is reported that a Ga0.92In0.08P0.05As0.08Sb0.87 quinary solid solution, which is lattice-matched to InAs, with a band gap of 695 meV (77 K) and 640 meV (300 K) is obtained. It is demonstrated that a heterojunction of type II is realized in the InAs/Ga0.92In0.08P0.05As0.08Sb0.87 structure. The solid solution obtained was used for the development of prototypes of light-emitting diodes and photodiodes with the highest intensity of emission and photosensitivity in the vicinity of 1.9 µm.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin & V. V. Shustov

  2. St. Petersburg State Electrotechnical University, St. Petersburg, 197376, Russia

    V. V. Kuznetsov & E. A. Kognovitskaya

Authors
  1. M. Aidaraliev
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  2. N. V. Zotova
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  3. S. A. Karandashev
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  4. B. A. Matveev
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  5. M. A. Remennyi
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  6. N. M. Stus’
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  7. G. N. Talalakin
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  8. V. V. Shustov
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  9. V. V. Kuznetsov
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  10. E. A. Kognovitskaya
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Additional information

__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 36, No. 8, 2002, pp. 1010–1015.

Original Russian Text Copyright © 2002 by A\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \)daraliev, Zotova, Karandashev, Matveev, Remennyi, Stus’, Talalakin, Shustov, Kuznetsov, Kognovitskaya.

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Aidaraliev, M., Zotova, N.V., Karandashev, S.A. et al. Lattice-matched GaInPAsSb/InAs structures for devices of infrared optoelectronics. Semiconductors 36, 944–949 (2002). https://doi.org/10.1134/1.1500478

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  • DOI: https://doi.org/10.1134/1.1500478

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