Logic Circuits with Carbon Nanotube Transistors
Adrian Bachtold,*
Peter Hadley,
Takeshi Nakanishi,
Cees Dekker
We demonstrate logic circuits with field-effect
transistors based on single carbon nanotubes. Our device layout
features local gates that provide excellent capacitive coupling between
the gate and nanotube, enabling strong electrostatic doping of the
nanotube from p-doping to n-doping and the study
of the nonconventional long-range screening of charge along the
one-dimensional nanotubes. The transistors show favorable device
characteristics such as high gain (>10), a large on-off ratio
(>105), and room-temperature operation. Importantly, the
local-gate layout allows for integration of multiple devices on a
single chip. Indeed, we demonstrate one-, two-, and three-transistor circuits that exhibit a range of digital logic operations, such as an
inverter, a logic NOR, a static random-access memory cell, and an ac
ring oscillator.
Department of Applied Physics, Delft University of
Technology, Lorentzweg 1, 2628 CJ Delft, Netherlands.
*
Present address: Laboratoire de Physique de la Matière
Condensée, École Normale Superieure, 24 Rue Lhomond, 75005 Paris, France.
To whom correspondence should be addressed. E-mail:
dekker{at}mb.tn.tudelft.nl
