Paper
8 November 2012 Process challenges in advanced photomask etch processes
Chang Ju Choi, Karmen Yung, Cheng-Hsin Ma, Ganesh Vanamu
Author Affiliations +
Abstract
Plasma etch challenges such as resolution enhancement, etch error reduction, and process reliability improvement are investigated in next generation phase shift photomask processes for ≤14nm technology node. Etch resolution predominantly depends on etch bias and linearity while overall process resolution is also determined by resist thickness. Several resolution enhancement techniques including thin hardmasks and new absorber materials are tested in terms of etch profile, linearity, and minimum feature printability. New approaches provide improvement on etch bias as well as good pattern fidelity for sub-resolution patterns. Reduction of etch profile errors is also critical to maintain high pattern resolution. It is found that some of etch profile distortion can be minimized by changing plasma conditions. To meet tighter process reliability requirement, we investigated a couple of advanced process control techniques in alternating phase shift mask manufacturing. Integration of real-time monitor is essential to obtain good process reliability with no degradation on defects or throughput.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chang Ju Choi, Karmen Yung, Cheng-Hsin Ma, and Ganesh Vanamu "Process challenges in advanced photomask etch processes", Proc. SPIE 8522, Photomask Technology 2012, 85220Q (8 November 2012); https://doi.org/10.1117/12.977137
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KEYWORDS
Etching

Plasma

Chromium

Plasma etching

Resolution enhancement technologies

Photomasks

Reliability

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