Paper
18 May 1989 Pyrolytic Laser-Induced Chemical Vapor Deposition (LCVD) Of Microstructures
T. Szorenyi, K. Piglmayer, D. Bauerle
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Proceedings Volume 1033, Trends in Quantum Electronics; (1989) https://doi.org/10.1117/12.950634
Event: International Conference on Trends in Quantum Electronics, 1988, Bucharest, Romania
Abstract
An analysis of the time evolution of the growth of W spots deposited by hydrogen reduction of WF6 under 647.1 nm Kr ion laser irradiation is presented. From measured lateral growth rates of the spots and model calculations for the temperature distributions in the deposit/substrate system the chemical kinetics that controls the deposition process is determined. The apparent chemical activation energies derived for substrates of fused quartz covered either with 70 nm of sputtered W or with 120 nm of amorphous Si (a-Si) are 30 kcal/mol and 40 kcal/mol, respectively.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Szorenyi, K. Piglmayer, and D. Bauerle "Pyrolytic Laser-Induced Chemical Vapor Deposition (LCVD) Of Microstructures", Proc. SPIE 1033, Trends in Quantum Electronics, (18 May 1989); https://doi.org/10.1117/12.950634
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KEYWORDS
Temperature metrology

Deposition processes

Chemical vapor deposition

Silicon

Amorphous silicon

Chemical analysis

Quantum electronics

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