Influence of Broadening and Barrier Recombination on the Operation of Short-Wavelength GaAs/AlGaAs Quantum Well Lasers

Alicia I. Kucharska; Peter Blood; E. Dennis Fletcher

doi:10.1117/12.950209

5 April 1989 Influence of Broadening and Barrier Recombination on the Operation of Short-Wavelength GaAs/AlGaAs Quantum Well Lasers

Alicia I. Kucharska, Peter Blood, E. Dennis Fletcher

Author Affiliations +

Proceedings Volume 1025, Semiconductor Lasers; (1989) https://doi.org/10.1117/12.950209
Event: 1988 International Congress on Optical Science and Engineering, 1988, Hamburg, Germany

Abstract

Examination of the spontaneous emission spectra of GaAs/AlGaAs quantum well lasers with 25Å wide wells shows that a realistic model of quantum well gain should include band gap renormalisation and broadening due to intraband scattering and fluctuations in the well width of ± 1 monolayer. Such a model has been used to obtain a correct description of laser wavelength as a function of gain. For parameter values describing our samples, the model predicts that the broadening due to monolayerofluctuations in the well width has a similar effect on the threshold current of a 2 x 25Å laser as the broadening due to intra-band scattering, and that the threshold current is about 2.5 times greater than without broadening. The calculations also predict a linear temperature dependence of threshold current between 200K and 400K. Since the principal effect of the broadening is to increase the threshold current, the value of the parameter To is predicted to increase to about 400K compared with about 320K without broadening. Non-radiative recombination processes in the AlGaAs barriers are shown to have the dominant effect on the temperature sensitivity above 300K, lowering the To to about 138K using a non-radiative recombination time of 3ns.

Citation Download Citation

Alicia I. Kucharska, Peter Blood, and E. Dennis Fletcher "Influence of Broadening and Barrier Recombination on the Operation of Short-Wavelength GaAs/AlGaAs Quantum Well Lasers", Proc. SPIE 1025, Semiconductor Lasers, (5 April 1989); https://doi.org/10.1117/12.950209

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