Optical Study Of Interface Effects In TCO/Amorphous Semiconductors Systems

F. Demichelis; G. Kaniadakis; E. Tresso; A. Tagliaferro; R. R. Arya

doi:10.1117/12.947421

9 August 1988 Optical Study Of Interface Effects In TCO/Amorphous Semiconductors Systems

F. Demichelis, G. Kaniadakis, E. Tresso, A. Tagliaferro, R. R. Arya

Proceedings Volume 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III; (1988) https://doi.org/10.1117/12.947421
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

The optical properties of each semiconducting layer in amorphous solar cells were deduced from transmittance and reflectance measurements. Optical gaps, absorbances and photon efficiencies o structures were deduced. The influence on such properties of the different transparent conductive oxides used as windows in solar cells was obtained by comparing the same structures covered by Tin Oxide and Indium Tin Oxide respectively.

Citation Download Citation

F. Demichelis, G. Kaniadakis, E. Tresso, A. Tagliaferro, and R. R. Arya "Optical Study Of Interface Effects In TCO/Amorphous Semiconductors Systems", Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); https://doi.org/10.1117/12.947421

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