Theoretical Study of drain current of AlInN/GaN HEMTs on SiC Substrate

Md. Iqbal Hossain; Khandakar Nusrat Islam; Chandan Qumar Howlader; Zahid Hasan Mahmood

doi:10.1117/12.927259

15 October 2012 Theoretical study of drain current of AlInN/GaN HEMTs on SiC substrate

Md. Iqbal Hossain, Khandakar Nusrat Islam, Chandan Qumar Howlader, Zahid Hasan Mahmood

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85490S (2012) https://doi.org/10.1117/12.927259
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

A new heterostructure based on Al_xIn_1-xN/GaN high electron mobility transistor (HEMT) on SiC substrate has been proposed for high frequency, where it offers the best performance in comparison to other two heterostructures like on Al_xGa_1-xN/GaN and In_xGa_1-xN/GaN. We have investigated the effect of different higher output characteristics in comparison to conventional Al_xGa_1-xN/GaN and In_xGa_1-xN/GaN with the Al_xIn_1-xN/GaN heterostructure, where the drain current is maximum for Al_xIn_1-xN/GaN and Al_xGa_1-xN/GaN heterostructure HEMT respectively for the same barrier thickness and for the same gate source voltage.

Citation Download Citation

Md. Iqbal Hossain, Khandakar Nusrat Islam, Chandan Qumar Howlader, and Zahid Hasan Mahmood "Theoretical study of drain current of AlInN/GaN HEMTs on SiC substrate", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490S (15 October 2012); https://doi.org/10.1117/12.927259

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