Optical and Electrical Characterization of Atomic Layer Deposited (ALD) HfO2/p-GaAs MOS capacitors

Anindita Das; Sanatan Chattopadhyay; Goutam Kumar Dalapati; Dongzhi Chi; M. K. Kumar

doi:10.1117/12.924341

15 October 2012 Optical and electrical characterization of atomic layer deposited (ALD) HfO2/p-GaAs MOS capacitors

Anindita Das, Sanatan Chattopadhyay, Goutam Kumar Dalapati, Dongzhi Chi, M. K. Kumar

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85493I (2012) https://doi.org/10.1117/12.924341
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

The HfO₂/p-GaAs metal-oxide-semiconductor (MOS) structures have been fabricated by developing and simulating an optimized process recipe. The optical dielectric constants and refractive indices of atomic-layer-deposited (ALD) HfO₂ films and the GaAs substrate are extracted from spectroscopic ellipsometer (SE) measurements. The quality of interface and that of the ALD HfO₂ films is investigated by analyzing capacitance-voltage (C-V) and conductance-voltage (G-V) data. Simulations of C-V and G-V data have also been performed for a similar process recipe to comprehensively understand the electrical quality of the dielectric layer. The optical dielectric constants for HfO₂ and GaAs layers are obtained to be 4.5-3.6 and 10-25, respectively, while their refractive indices are obtained to be 2.12-1.89 and 3-5.2, respectively. A frequency dispersion of the C-V graphs is observed indicating the presence of a Ga₂O₃ interfacial layer which has been confirmed from the device simulation. A flat band voltage shift of − (0.68-1.05) eV and interface state density of (5×10¹¹ - 1 ×10¹²) cm^-2 eV^-1 are obtained.

Citation Download Citation

Anindita Das, Sanatan Chattopadhyay, Goutam Kumar Dalapati, Dongzhi Chi, and M. K. Kumar "Optical and electrical characterization of atomic layer deposited (ALD) HfO2/p-GaAs MOS capacitors", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85493I (15 October 2012); https://doi.org/10.1117/12.924341

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