Low threshold short cavity quantum cascade lasers

Xing Chen; Liwei Cheng; Dingkai Guo; Fow-Sen Choa; Terry Worchesky

doi:10.1117/12.875960

16 February 2011 Low threshold short cavity quantum cascade lasers

Xing Chen, Liwei Cheng, Dingkai Guo, Fow-Sen Choa, Terry Worchesky

Proceedings Volume 7953, Novel In-Plane Semiconductor Lasers X; 79531Z (2011) https://doi.org/10.1117/12.875960
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

Low threshold quantum cascade lasers (QCLs) are important for low-power chemical sensor applications. We report a low-threshold high-period-number 4.8μm strain-balanced InGaAs/InAlAs quantum cascade laser. By growing more periods (up to 60 periods) of QCL stages, shortening the QCL cavity length, and applying high-reflectivity coatings on both facets of the laser cavity, low threshold QCLs can be obtained. At current stage a QCL threshold of <30mA at 20K, <50mA at 80K, and <120mA near room temperature were achieved. Low current threshold QCLs will have significant impacts to future chemical sensing systems.

Citation Download Citation

Xing Chen, Liwei Cheng, Dingkai Guo, Fow-Sen Choa, and Terry Worchesky "Low threshold short cavity quantum cascade lasers", Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 79531Z (16 February 2011); https://doi.org/10.1117/12.875960

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