Paper
29 September 2010 Inspection of advanced computational lithography logic reticles using a 193-nm inspection system
Ching-Fang Yu, Mei-Chun Lin, Mei-Tsu Lai, Luke T.H. Hsu, Angus Chin, S. C. Lee, Anthony Yen, Jim Wang, Ellison Chen, David Wu, William H. Broadbent, William Huang, Zinggang Zhu
Author Affiliations +
Abstract
We report inspection results of early 22-nm logic reticles designed with both conventional and computational lithography methods. Inspection is performed using a state-of-the-art 193-nm reticle inspection system in the reticleplane inspection mode (RPI) where both rule-based sensitivity control (RSC) and a newer modelbased sensitivity control (MSC) method are tested. The evaluation includes defect detection performance using several special test reticles designed with both conventional and computational lithography methods; the reticles contain a variety of programmed critical defects which are measured based on wafer print impact. Also included are inspection results from several full-field product reticles designed with both conventional and computational lithography methods to determine if low nuisance-defect counts can be achieved. These early reticles are largely single-die and all inspections are performed in the die-to-database inspection mode only.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ching-Fang Yu, Mei-Chun Lin, Mei-Tsu Lai, Luke T.H. Hsu, Angus Chin, S. C. Lee, Anthony Yen, Jim Wang, Ellison Chen, David Wu, William H. Broadbent, William Huang, and Zinggang Zhu "Inspection of advanced computational lithography logic reticles using a 193-nm inspection system", Proc. SPIE 7823, Photomask Technology 2010, 78232F (29 September 2010); https://doi.org/10.1117/12.865604
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KEYWORDS
Reticles

Inspection

SRAF

Semiconducting wafers

Computational lithography

Control systems

Databases

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