AlxGa(1-x)N/GaN structure diagnostic by C-V characteristics method

K. L. Enisherlova; I. B. Gulyaev; V. G. Goryachev; A. U. Dorofeev; E. M. Temper; N. B. Gladisheva

doi:10.1117/12.802461

29 April 2008 Al_xGa_(1-x)N/GaN structure diagnostic by C-V characteristics method

K. L. Enisherlova, I. B. Gulyaev, V. G. Goryachev, A. U. Dorofeev, E. M. Temper, N. B. Gladisheva

Proceedings Volume 7025, Micro- and Nanoelectronics 2007; 702514 (2008) https://doi.org/10.1117/12.802461
Event: Micro- and Nanoelectronics 2007, 2007, Zvenigorod, Russian Federation

Abstract

Nondestructive diagnostic method was developed for epitaxial heterostructure quality prediction. Such prediction is very important for production of some types HF FETs. The various heterostructure modifications grown on sapphire substrates have been analyzed. These structures were grown by MOCVD method from the metalorganic compounds with variation of Al mol-content in the AlGaN layers in wide limits (0,05>x>0,42). The C-V measurements were used for electrical analysis Al_xGaN\GaN films with Hg-probe at frequencies 1MHz, 10kHz, 1kHz, 100Hz. Both electrodes (Hg-probe and Common) were placed on the same active surface of the heterostructure. C-V curves looks like a <<step>> with C_max and C_min independent of voltage. The test FETs were produced for comparison with results of C-V measurements. It was found that the voltage of transition from C_max to C_min corresponds with pinch-off voltage (V_p.f.) of test FETs. The values of C _min> 1pF points to the presence of parasitic conducting layer in buffer layer.

Citation Download Citation

K. L. Enisherlova, I. B. Gulyaev, V. G. Goryachev, A. U. Dorofeev, E. M. Temper, and N. B. Gladisheva "Al_xGa_(1-x)N/GaN structure diagnostic by C-V characteristics method", Proc. SPIE 7025, Micro- and Nanoelectronics 2007, 702514 (29 April 2008); https://doi.org/10.1117/12.802461

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Gallium nitride

Heterojunctions

Field effect transistors

Electrodes

Resistance

Aluminum

Capacitance

Show All Keywords

Keywords/Phrases

Search In:

Publication Years