Hybrid resist model to enhance continuous process window model for OPC

Qiaolin Zhang; Kevin Lucas

doi:10.1117/12.793028

19 May 2008 Hybrid resist model to enhance continuous process window model for OPC

Qiaolin Zhang, Kevin Lucas

Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 70280L (2008) https://doi.org/10.1117/12.793028
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan

Abstract

As the semiconductor industry enters the 45nm node and beyond, the tolerable lithography process window significantly shrinks due to the decreasing k₁ factor and increasing lens NA required to meet product shrink goals. The usable depth of focus at the 45nm node for critical layer is less than 200nm and for the 32nm node it will approach 100nm. Consequently, process window aware Optical Proximity Correction (OPC) and Lithography Rule Check (LRC) become crucial to ensure the robustness of OPC to focus and dose variation. An accurately calibrated continuous process window model is the corner stone for successful process variation aware OPC and LRC. For ease of use, this calibrated model should be a continuous function of defocus and dose and able to interpolate and extrapolate in the usable process window. Lithographic proximity effects have an optical component and a resist component. As state of the art OPC simulation tool is capable of precise and fast optical simulation, however its treatment of chemical amplified resist effects is relatively crude and does not capture the complex behavior during acid & quencher reaction, diffusion and development. This in turn causes difficulties for a continuous process window model where the resist component plays an important role. We proposed a hybrid resist model, which is a superposition of a traditional OPC chemical amplified resist model and a first order resist bias model. Using Synopsys' OPC modeling software package-ProGen, we incorporated this hybrid resist model into the continuous process window (PW) modeling module, and very good model calibration performance was achieved.

Citation Download Citation

Qiaolin Zhang and Kevin Lucas "Hybrid resist model to enhance continuous process window model for OPC", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70280L (19 May 2008); https://doi.org/10.1117/12.793028

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KEYWORDS

Process modeling

Calibration

Optical proximity correction

Data modeling

Performance modeling

Semiconducting wafers

Finite element methods

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