Paper
29 March 2006 Negative-tone polyphenol resist based on chemically amplified polarity change reaction with sub-50 nm resolution capability
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Abstract
We designed a novel chemically-amplified negative-tone molecular-resist compound of 3M6C-MBSA-BL, which is a γ-hydroxycarboxylated polyphenol (4,4'-methylenebis[2-[di(2-methyl-4-hydroxy-5-cyclohexylphenyl)] methyl]phenol (3M6C-MBSA)) for EB and EUV lithographies to be used in hp 45 and beyond technology nodes. After selection of photo acid generators (PAGs) and optimization of the concentration of PAG in the resist, we could demonstrate 40-nm line and space patterns resolution by EB exposure. Also dry-etching durability and 1-month shelf life at -20oC were confirmed. Small line-edge roughness (LER) values of 4.5 nm (inspection length: L = 620 nm) and 6.2 nm (L = 1800 nm) were achieved using the 3M6C-MBSA-BL resist.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kyoko Kojima, Takashi Hattori, Hiroshi Fukuda, Taku Hirayama, Daiju Shiono, Hideo Hada, and Junichi Onodera "Negative-tone polyphenol resist based on chemically amplified polarity change reaction with sub-50 nm resolution capability", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61530G (29 March 2006); https://doi.org/10.1117/12.656112
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Cited by 2 scholarly publications.
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KEYWORDS
Line edge roughness

Lithography

Scanning electron microscopy

Etching

FT-IR spectroscopy

Potassium

Silicon

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